NTMFS4H01N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
2520151050
0
1000
3000
4000
6000
7000
9000
10,000
906050403020100
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
1.00.90.80.70.60.50.4
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
1001010.10.01
0.01
0.1
1
10
100
1000
150125100755025
0
20
60
80
120
160
180
220
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
2000
5000
8000
70 80
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
T
J
= 25°C
V
GS
= 10 V
V
DD
= 12.0 V
I
D
= 30 A
Q
T
Q
gd
Q
gs
t
d(off)
t
d(on)
t
r
t
f
T
J
= 125°C T
J
= 25°C
V
GS
= 0 V
0 V < V
GS
< 10 V
100 ms
1 ms
10 ms
dcR
DS(on)
Limit
Thermal Limit
Package Limit
I
D
= 38 A
40
100
140
200
V
DD
= 12 V
I
D
= 15 A
V
GS
= 10 V
