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NTMFS4H01NT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1
1 Publication Order Number:
NTMFS4H01N/D
NTMFS4H01N
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain-to-Source Voltage V
DSS
25 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain Current R
q
JA
(T
A
= 25°C, Note 1)
I
D
54 A
Power Dissipation R
q
JA
(T
A
= 25°C, Note 1)
P
D
3.2 W
Continuous Drain Current R
q
JC
(T
C
= 25°C, Note 1)
I
D
334 A
Power Dissipation R
q
JC
(T
C
= 25°C, Note 1)
P
D
125 W
Pulsed Drain Current (t
p
= 10 ms)
I
DM
568 A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (I
L
= 58 A
pk
, L = 0.3 mH)
E
AS
505 mJ
Drain to Source dV/dt dV/dt 7 V/ns
Maximum Junction Temperature T
J(max)
150 °C
Storage Temperature Range T
STG
−55 to
150
°C
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm
2
(or 1 in
2
) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 38 A, E
AS
= 217 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
R
q
JA
R
q
JC
38.9
1.0
°C/W
4. Thermal Resistance R
q
JA
and R
q
JC
as defined in JESD51−3.
http://onsemi.com
V
GS
MAX R
DS(on)
TYP Q
GTOT
4.5 V
0.97 mW
39 nC
N−CHANNEL MOSFET
10 V
0.7 mW
85 nC
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
(Top View) (Bottom View)
G (4)
S (1,2,3)
D (5−8)
NTMFS4H01N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
13
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1
mA
T
J
= 125°C 30
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= +20 V +100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 2.1 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 0.55 0.7
mW
V
GS
= 4.5 V I
D
= 30 A 0.76 0.97
Forward Transconductance g
FS
V
DS
= 12 V, I
D
= 15 A 101 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
5693
pF
Output Capacitance C
OSS
3718
Reverse Transfer Capacitance C
RSS
212
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 12 V; I
D
= 30 A
39
nC
Threshold Gate Charge Q
G(TH)
2.4
Gate−to−Source Charge Q
GS
14
Gate−to−Drain Charge Q
GD
8.5
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 12 V; I
D
= 30 A 85 nC
Gate Resistance R
G
T
A
= 25°C 1.2 2
W
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A,
R
G
= 3.0 W
18
ns
Rise Time t
r
49
Turn−Off Delay Time t
d(OFF)
46
Fall Time t
f
35
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
11
ns
Rise Time t
r
33.6
Turn−Off Delay Time t
d(OFF)
46
Fall Time t
f
34
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.75 1.1
V
T
J
= 125°C 0.55
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
68.7
ns
Charge Time t
a
34.1
Discharge Time t
b
34.6
Reverse Recovery Charge Q
RR
90
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4H01N
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
20
60
80
120
140
180
200
3.02.52.01.51.00.50
0
20
60
80
120
140
180
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
(V) I
D
, DRAIN CURRENT (A)
981076543
0
0.0002
0.0006
0.0008
0.0012
0.0014
0.0016
0.0020
11090807060403020
0.0004
0.00045
0.00055
0.0006
0.00065
0.00075
0.00085
0.0009
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
1.0
1.1
1.2
1.4
1.5
1.7
25201510
1E−08
1E−07
1E−06
1E−05
1E−04
1E−03
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
40
100
160
40
100
160
0.0004
0.0010
0.0018
50 100 120
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0005
0.0007
0.0008
150
0.9
1.3
1.6
I
D
= 30 A
V
GS
= 10 V
T
J
= 25°C
V
GS
= 10 V to 3 V
V
GS
= 2.8 V
V
GS
= 2.6 V
V
GS
= 2.4 V
V
GS
= 2.2 V
T
J
= 25°C
T
J
= −55°C
V
DS
= 5 V
T
J
= 125°C
I
D
= 30 A
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 85°C
T
J
= 125°C
T
J
= 150°C
T
J
= 25°C
V
GS
= 0 V
P1-P3P4-P6P7-P7

NTMFS4H01NT3G

Mfr. #:
Buy NTMFS4H01NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 25V 334A 700MO
Lifecycle:
New from this manufacturer.
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