MT18HTF12872FY-667B5E3

pdf: 09005aef81a2f214/source: 09005aef81a2f22d Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
10 ©2005 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
I
DD
Conditions and Specifications
Notes: 1. Total power is based on maximum voltage levels, ICC @ 1.575V and IDD @ 1.9V.
Table 14: IDD Specifications – 2GB DDR2-533
Symbol IDD_Idle_0 IDD_Idle_1 IDD_Active_1 IDD_Active_2 IDD_Training IDD_IBIST IDD_EI Units
I
CC
2,200 3,000 3,400 3,200 3,500 3,800 2,000 mA
I
DD
1,620 1,620 3,095 1,620 1,620 1,620 326 mA
Total power
6.5 7.8 11.2 8.1 8.6 9.0 3.8 W
Table 15: IDD Specifications – 2GB DDR2-667
Symbol IDD_Idle_0 IDD_Idle_1 IDD_Active_1 IDD_Active_2 IDD_Training IDD_IBIST IDD_EI Units
I
CC
2,600 3,400 3,900 3,700 4,000 4,500 2,500 mA
I
DD
1,620 1,620 3,275 1,620 1,620 1,620 326 mA
Total power
7.1 8.4 12.3 8.9 9.3 10.2 4.6 W
Table 16: IDD Specifications – 2GB DDR2-800
Symbol IDD_Idle_0 IDD_Idle_1 IDD_Active_1 IDD_Active_2 IDD_Training IDD_IBIST IDD_EI Units
I
CC
TBD TBD TBD TBD TBD TBD TBD mA
I
DD
TBD TBD TBD TBD TBD TBD TBD mA
Total power
TBD TBD TBD TBD TBD TBD TBD W
pdf: 09005aef81a2f214/source: 09005aef81a2f22d Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
11 ©2005 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 17: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 3.0 3.6 V
Input high voltage: logic 1; all inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: logic 0; all inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
VOL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3.0 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3.0 µA
Standby current
I
SB 1.6 4.0 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1.0 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
2.0 3.0 mA
Table 18: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
pdf: 09005aef81a2f214/source: 09005aef81a2f22d Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
12 ©2005 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Serial Presence-Detect
Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module
Byte Description Entry 1GB 2GB
0
CRC range
SPD bytes total
Bytes used
Bytes 0–116/
256 bytes/
176 bytes
92 92
1
SPD revision
Revision 1.1 11 11
2
Key byte/DRAM device type
DDR2 FBDIMM 09 09
3
Voltage levels of this assembly
DRAM/AMB 12 12
4
SDRAM addressing: Device rows/columns/banks
14 rows
11 columns
4 or 8 banks
48 49
5
Module physical attributes: Height/thickness
30mm/7.16mm 23 23
6
Module type
FBDIMM 07 07
7
Module organization: Module ranks/SDRAM device width (I/O)
Single rank/x4 08 08
8
Fine time-base dividend and divisor
5.0ps 51 51
9
Medium time-base dividend
1/4 = 0.25ns 01 01
10
Medium time-base divisor
1/4 = 0.25ns 04 04
11
SDRAM MIN cycle time (
t
CK [MIN])
-80E
-667
-53E
0A
0C
0F
0A
0C
0F
12
SDRAM MAX cycle time (
t
CK [MAX])
8ns 20 20
13
SDRAM CLs supported: -53E CL = 4, 3; -667 CL = 5, 4, 3;
-80E CL = 5, 4
-80E
-667
-53E
24
33
23
24
33
23
14
SDRAM MIN CL time (
t
CAS)
15ns 3C 3C
15
SDRAM WRITE recovery times supported
Range, MIN 22 22
16
SDRAM WRITE recovery time (
t
WR)
15ns 3C 3C
17
SDRAM WRITE latencies supported
Range, MIN 42 42
18
SDRAM additive latencies supported
Range, MIN 40 40
19
SDRAM MIN RAS-to-CAS delay (
t
RCD)
12.5ns (-80E)
15ns(-667/-53E )
32
3C
32
3C
20
SDRAM MIN row active-to-row active delay (
t
RRD)
7.5ns 1E 1E
21
SDRAM MIN row precharge time (
t
RP)
-80E (12.5ns)
-667/-53E (15ns)
32
3C
32
3C
22
SDRAM upper nibbles for
t
RAS and
t
RC
–0000
23
SDRAM MIN active-to-precharge time (
t
RAS)
44ns B4 B4
24
SDRAM MIN auto refresh-to-active/auto refresh time (
t
RC)
55ns DC DC
25
SDRAM minimum AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
t
RFC-LSB)
105ns (1GB)
127.5ns (2GB)
A4 FE
26
SDRAM minimum AUTO REFRESH-to-ACTIVE/AUTO REFRESH
command period (
t
RFC-MSB)
01 01
27
SDRAM internal WRITE-to-READ command delay (
t
WTR)
7.5ns 1E 1E
28
SDRAM internal READ-to-PRECHARGE command delay (
t
RTP)
7.5ns 1E 1E
29
SDRAM burst lengths supported
4, 8 03 03
30
SDRAM drivers/terminations supported: 03 = 75Ω and 100Ω;
07 = 50Ω, 75Ω, and 100Ω
-80E/-667
-53E
07
03
07
03
31
Drivers supported
Weak drivers 01 01
32
SDRAM refresh rate (
t
REFI), 95°C support and double refresh
7.8µs C2 C2

MT18HTF12872FY-667B5E3

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 1GB 240FBDIMM
Lifecycle:
New from this manufacturer.
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