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NTR3A052PZT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
October, 2016 − Rev. 1
1 Publication Order Number:
NTR3A052PZ/D
NTR3A052PZ
Power MOSFET
−20 V, −3.6 A, Single P−Channel
SOT−23 Package
Features
• Leading −20 V Trench for Low R
DS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain Curren
t
(Note 1)
Steady
State
T
A
= 25°C
I
D
−3.3
A
T
A
= 70°C −2.6
t ≤ 5 s
T
A
= 25°C −3.6
T
A
= 70°C −2.9
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.72
W
t ≤ 5 s 0.86
Continuous Drain Curren
t
(Note 2)
Steady
State
T
A
= 25°C
I
D
−2.5
A
T
A
= 70°C −2.0
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.42 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−13 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.3 A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
174
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
145
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
300
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 727 mm sq., 1 oz).
2. Surface−mounted on FR4 board using minimum pad size
(Cu area = 3.8 mm sq., 1 oz).
Device Package Shipping
†
ORDERING INFORMATION
−20 V
47 mW @ −4.5 V
R
DS(on)
Max
−3.6 A
I
D
MAXV
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTR3A052PZT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
P−Channel MOSFET
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
TRJ = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
TRJ MG
G
1
Gate
2
Source
Drain
3
63 mW @ −2.5 V
100 mW @ −1.8 V
D
S
G
1
3
2
www.onsemi.com
NTR3A052PZ
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
16 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C −1
mA
T
J
= 125°C −100
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8 V ±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −1.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
3.3 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V I
D
= −3.5 A 33 47 mW
V
GS
= −2.5 V I
D
= −3.0 A 41 63
V
GS
= −1.8 V I
D
= −2.0 A 54 100
V
GS
= −1.5 V I
D
= −0.5 A 69
Forward Transconductance g
FS
V
DS
= −5 V, I
D
= −3.5 A 16 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= −4 V
1243
pF
Output Capacitance C
oss
194
Reverse Transfer Capacitance C
rss
158
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −4 V,
I
D
= −3.5 A
11.9
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
1.7
Gate−to−Drain Charge Q
GD
2.6
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(on)
V
GS
= −4.5 V, V
DS
= −4 V,
I
D
= −1.2 A, R
G
= 6.0 W
8.0
ns
Rise Time t
r
15
Turn−Off Delay Time t
d(off)
38
Fall Time t
f
42
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −1.2 A
T
J
= 25°C −0.7 −1.2
V
T
J
= 125°C −0.6
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ms,
I
S
= −1.2 A
18
ns
Charge Time t
a
8.0
Discharge Time t
b
10
Reverse Recovery Charge Q
RR
6.9 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR3A052PZ
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3
TYPICAL CHARACTERISTICS
−8.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
2
6
8
12
14
18
24
3.02.01.51.00
0
2
4
6
8
14
18
20
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
4.0 4.53.53.02.52.01.51.0
20
40
60
80
100
160
201551
40
80
160
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.5
181412108642
1
1000
10,000
100,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
−I
DSS
, LEAKAGE (nA)
4
10
16
V
GS
= −2.2 V
−1.6 V
−2.0 V
−2.5 V
−4.5 V
10
12
16
V
DS
= −5 V
T
J
= 150°C
T
J
= −55°C
T
J
= 25°C
120
140
T
J
= 25°C
I
D
= −3.5 A
10 25
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
T
J
= 25°C
V
GS
= −1.8 V
V
GS
= −4.5 V
150 16 20
V
GS
= −4.5 V
I
D
= −3.5 A
T
J
= 150°C
T
J
= 125°C
20
60
120
140
100
V
GS
= −2.5 V
−1.8 V
−1.5 V
−1.4 V
−1.2 V
20
22
2.50.5
22
24
1.4
100
10
0
T
J
= 100°C
T
J
= 85°C
T
J
= 25°C
P1-P3P4-P6

NTR3A052PZT1G

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Buy NTR3A052PZT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET SOT23 20V 52MO
Lifecycle:
New from this manufacturer.
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