Sheet No.: D2-A06202EN
16
PC928J00000F Series
■ Design Considerations
Transistor of detector side in bipolar configuration may be damaged by static electricity due to its minute
design.
When handling these devices, general countermeasure against static electricity should be taken to avoid
breakdown of devices or degradation of characteristics.
● Notes about static electricity
In order to stabilize power supply line, we should certainly recommend to connect a by-pass capacitor of
0.01µF or more between V
CC
and GND near the device.
We recommend to use approximately 1 000pF of capacitor between C-pin and GND in order to prevent miss
operation by noise.
In the case that capacitor is used approximately 1kΩ of resistance shall be recommended to use between
V
CC
and C-pin However, the rise time of C-pin shall be changed by time constant of added CR, so that
please use this device after confirmation.
In case that some sudden big noise caused by voltage variation is provided between primary and secondary
terminals of photocoupler some current caused by it is floating capacitance may be generated and result in
false operation since current may go through IRED or current may change.
If the photocoupler may be used under the circumstances where noise will be generated we recommend to
use the bypass capacitors at the both ends of IRED.
The detector which is used in this device, has parasitic diode between each pins and GND.
There are cases that miss operation or destruction possibly may be occurred if electric potential of any pin
becomes below GND level even for instant.
Therefore it shall be recommended to design the circuit that electric potential of any pin does not become
below GND level.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Design guide
