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FDC6322C

P1-P3P4-P6P7-P8
FDC6322C.Rev B1
Typical Electrical Characteristics: N-Channel
0 0.1 0.2 0.3 0.4 0.5
0.6
0.8
1
1.2
1.4
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.0V
GS
2.7
3.0
4.0
4.5
D
3.5
2.5
R DS(on) , NORMALIZED
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
0.5 1 1.5 2 2.5
0
0.05
0.1
0.15
0.2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C
125°C
V = 5.0V
DS
GS
D
T = -55°C
J
Figure 5. Transfer Characteristics.
0.2 0.4 0.6 0.8 1 1.2
0.0001
0.001
0.01
0.1
0.2
0.5
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
2 2.5 3 3.5 4
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I = 0.2A
GS
R , ON-RESISTANCE (OHM)
DS(on)
125°C
25°C
D
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 2.7 V
GS
I = 0.2A
D
R , NORMALIZED
DS(ON)
0 0.5 1 1.5 2 2.5 3
0
0.1
0.2
0.3
0.4
0.5
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5
2.7
2.5
V = 4.5V
GS
4.0
2.0
1.5
DS
D
3.0
FDC6322C.Rev B1
Figure 9. Maximum Safe Operating Area.
Figure 8. Gate Charge Characteristics.
0.1 0.5 1 2 5 10 25
1
2
3
5
10
20
30
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 7. Capacitance Characteristics.
Typical Electrical Characteristics: N-Channel (continued)
0 0.1 0.2 0.3 0.4 0.5 0.6
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 0.2A
D
15V
V = 5V
DS
10V
0.5 1 2 5 10 15 25 35
0.01
0.02
0.05
0.1
0.2
0.5
1
V , DRAI N-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
DC
1s
100ms
1ms
RDS(ON) LIMIT
V = 2.7V
SINGLE PULSE
R =See note 1b
T = 25°C
GS
A
θ
JA
10ms
0.01 0.1 1 10 100 300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =See note 1b
T = 25°C
θ
JA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
FDC6322C.Rev B1
Typical Electrical Characteristics: P-Channel
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 13. On-Resistance Variation
with Temperature.
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 14. On Resistance Variation with
-5-4-3-2-10
-1.5
-1.25
-1
-0.75
-0.5
-0.25
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -4.5V
GS
DS
D
-2.7
-2.5
-2.0
-3.0
-1.5
-3.5
-1-0.8-0.6-0.4-0.20
-1.6
-1.4
-1.2
-1
-0.8
-0.6
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -2.0 V
GS
D
R , NORMALIZED
DS(on)
-3.5
-4.5
-2.7
-2.5
-3.0
-4.0
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -2.7V
GS
I = -0.25A
D
-5-4.5-4-3.5-3-2.5-2-1.5-1
0
1
2
3
4
5
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(on)
125°C
25°C
I = -0.5A
D
-3-2.5-2-1.5-1-0.5
-1
-0.75
-0.5
-0.25
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -5V
DS
GS
D
T = -55°C
J
125°C
25°C
0 0.2 0.4 0.6 0.8 1 1.2
0.0001
0.01
0.1
0.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
P1-P3P4-P6P7-P8

FDC6322C

Mfr. #:
Buy FDC6322C
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SSOT-6 COMP N-P-CH
Lifecycle:
New from this manufacturer.
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