NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX650 ZTX651 UNIT
Collector-Base Voltage V
CBO
60 80 V
Collector-Emitter Voltage V
CEO
45 60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
2A
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX650 ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60 80 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45 60 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.1
10
0.1
10
µA
µA
µA
µA
V
CB
=45V
V
CB
=60V
V
CB
=45V,T =100°C
V
CB
=60V,T =100°C
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 1.25 0.9 1.25 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8 1 0.8 1 V IC=1A, V
CE
=2V*
ZTX650
ZTX651
3-219
C
B
E
E-Line
TO92 Compatible
PARAMETER SYMBOL
ZTX650 ZTX651
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
140 175 140 175 MHz I
C
=100mA, V
CE
=5V
f=100MHz
Switching Times t
on
45 45 ns I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
800 800 ns
Output Capacitance C
obo
30 30 pF V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX650
ZTX651
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax Po
we
r
D
issipati
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20
40 60 80 100 120 200180160140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-220
