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2N1893S

P1-P2
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
Qualified Level
2N720A
2N1893
2N1893S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
All Devices Units
Collector-Emitter Voltage
V
CEO
80 Vdc
Collector-Base Voltage
V
CBO
120 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Collector-Emitter Voltage (R
BE
= 10 Ω)
V
CER
100 Vdc
Collector Current I
C
500 mAdc
2N720A
2N1893, S
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
0.5
1.8
0.8
3.0
W
Operating & Storage Junction Temperature Range
T
J
,
T
srg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S
Unit
Thermal Resistance, Junction-to-Case
R
θJC
97 58
0
C/W
1) Derate linearly 2.86 mW/
0
C for 2N720A, 4.57 mW/
0
C for 2N1893, S T
A
> 25
0
C
2) Derate linearly 10.3 mW/
0
C for 2N720A, 17.2 mW/
0
C for 2N1893, S T
C
> 25
0
C
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
V
(BR)
CEO
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10 Ω
V
(BR)
CER
100
Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 90 Vdc
I
CBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
10
10
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
h
FE
20
35
40 120
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
CE(sat)
5.0
Vdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
V
BE(sat)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
h
fe
3.0 10
Small-Signal Short-Circuit Forward Current Transfer Ratio
V
CE
=5.0 Vdc, I
C
= 1.0 mAdc
V
CE
=10 Vdc, I
C
= 5.0 mAdc, f = 1.0 kHz
h
fe
35
45 100
Small-Signal Short-Circuit Input Impedance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
h
ib
4.0 8.0
Ω
Small-Signal Short-Circuit Output Admittance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
h
ob
0.5
µΩ
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
2 15
P
F
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
t
on +
t
off
30
ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
P1-P2

2N1893S

Mfr. #:
Buy 2N1893S
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
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