TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
Qualified Level
2N720A
2N1893
2N1893S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
All Devices Units
Collector-Emitter Voltage
V
CEO
80 Vdc
Collector-Base Voltage
V
CBO
120 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Collector-Emitter Voltage (R
BE
= 10 Ω)
V
CER
100 Vdc
Collector Current I
C
500 mAdc
2N720A
2N1893, S
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
0.5
1.8
0.8
3.0
W
Operating & Storage Junction Temperature Range
T
J
,
T
srg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S
Unit
Thermal Resistance, Junction-to-Case
R
θJC
97 58
0
C/W
1) Derate linearly 2.86 mW/
0
C for 2N720A, 4.57 mW/
0
C for 2N1893, S T
A
> 25
0
C
2) Derate linearly 10.3 mW/
0
C for 2N720A, 17.2 mW/
0
C for 2N1893, S T
C
> 25
0
C
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
V
(BR)
CEO
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10 Ω
V
(BR)
CER
100
Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 90 Vdc
I
CBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
I
EBO
10
10
µAdc
ηAdc
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