PM450CLA120 Datasheet PM450CLA120 | P1-P3

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

PM450CLA120

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1µm fine rule process.

For example, typical V

ce(sat)=1.9V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of

CSTBT chip, and error output is possible from all each con-

servation upper and lower arm of IPM.

•3φ 450A, 1200V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-

circuit, over-temperature & under-voltage (Fo available from

all arm devices)

• Acoustic noise-less 75kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

File No.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

35.5

36.6

121110987

12 34 56

13

14

16

15

17

18

20

19

9.08

21 3-2.54

50

53.75 50 53.75

31.84

3-2.543.22

50

21

22

24

23

25

26

28

27

21 3-2.54

31.84

3-2.543.22

29

30

32

31

33

34

36

35

21 3-2.54

31.84

3-2.543.22

17

12

17

12

17

12

17

12

17

12

17

12

162

172

50±

0.5

6

14 22 28 22 2228

50±

0.5

50±

0.5

11

8-φ5.5

MOUNTING HOLES

6-φ2.5

12-M6 NUTS

94.5

7.75

55

3.75

(15.5)

150

137

123

110±

0.5

99

20

13.5

5.5

6.5

24- 0.64

(SCREWING DEPTH)

LABEL

(24)2

17

6

12

8-φ3.5

+1.0

–0.5

1. N

2. P

3. N

4. P

5. N

6. P

7. W

8. W

9. V

10. V

11. U

12. U

13. VUPC

14. UPFO

15. UP

16. VUP1

17. VUNC

18. UNFO

19. UN

20. VUN1

21. VVPC

22. VPFO

23. VP

24. VVP1

25. VVNC

26. VNFO

27. VN

28. VVN1

29. VWPC

30. WPFO

31. WP

32. VWP1

33. VWNC

34. WNFO

35. WN

36. VWN1

Terminal code

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

VCES

±IC

±ICP

PC

Tj

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

Junction Temperature

V

D = 15V, VCIN = 15V

T

C = 25°C

T

C = 25°C

T

C = 25°C (Note-1)

V

A

W

°C

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Ratings Unit

1200

450

900

2500

–20 ~ +150

INTERNAL FUNCTIONS BLOCK DIAGRAM

UN VUN1

UNFOVUNC

UP VUP1

UPFOVUPC

VN VVN1

VNFOVVNC

VP VVP1

VPFOVVPC

WN VWN1

1.5k 1.5k 1.5k 1.5k 1.5k 1.5k

WNFOVWNC

WP VWP1

WPFOVWPC

NUP

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

NVP

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

NWP

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

CONTROL PART

VFO

IFO

V

mA

20

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Symbol

Parameter Condition Ratings Unit

Applied between : V

UP1-VUPC, VVP1-VVPC, VWP1-VWPC

VUN1-VUNC, VVN1-VVNC, VWN1-VWNC

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN-VUNC, VN-VVNC, WN-VWNC

Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC

UNFO-VUNC, VNFO-VVNC, WNFO-VWNC

Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO

terminals

20

VD

VCIN

V

MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA120

FLAT-BASE TYPE

INSULATED PACKAGE

Jul. 2005

Parameter

Symbol

Supply Voltage Protected by

SC

Supply Voltage (Surge)

Storage Temperature

Isolation Voltage

Condition

V

CC(surge)

Tstg

Viso

Ratings

V

CC(PROT)

800

1000

–40 ~ +125

2500

Unit

V

°C

V

rms

V

D = 13.5 ~ 16.5V, Inverter Part,

T

j = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

TOTAL SYSTEM

0.05

0.09

0.014

°C/W

Rth(j-c)Q

Rth(j-c)F

Rth(c-f)

Inverter IGBT (per 1 element) (Note-1)

Inverter FWDi (per 1 element) (Note-1)

Case to fin, (per 1 module)

Thermal grease applied (Note-1)

Symbol

Condition

Unit

Min.

—

Junction to case Thermal

Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

Parameter

Limits

Typ. Max.

(Note-1) Tc measurement point is just under the chip.

If you use this value, R

th(f-a) should be measured just under the chips.

UP

IGBT

30.1

82.7

VP WP UN VN WN

FWDi

19.2

82.7

IGBT

80.1

82.7

FWDi

69.2

82.7

IGBT

130.1

82.7

FWDi

119.2

82.7

IGBT

19.8

27.2

FWDi

30.7

27.2

IGBT

69.8

27.2

FWDi

80.7

27.2

IGBT

119.8

27.2

FWDi

130.7

27.2

arm

axis

X

Y

2.3

2.4

3.9

2.5

0.8

1.0

3.5

1.2

1

10

Min. Typ. Max.

Collector-Emitter

Saturation Voltage

Collector-Emitter

Cutoff Current

–I

C = 450A, VD = 15V, VCIN = 15V (Fig. 2)

T

j = 25°C

T

j = 125°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Parameter

Symbol

Condition

V

CE(sat)

ICES

VEC

ton

trr

tc(on)

toff

tc(off)

Limits

—

0.5

—

1.8

1.9

2.8

1.0

0.5

0.4

2.3

0.7

—

T

j = 25°C

T

j = 125°C

FWDi Forward Voltage

Switching Time

V

D = 15V, VCIN = 0V↔15V

V

CC = 600V, IC = 450A

T

j = 125°C

Inductive Load (Fig. 3, 4)

V

CE

= V

CES

, V

CIN

= 15V

(Fig. 5)

V

D = 15V, IC = 450A

V

CIN = 0V (Fig. 1)

V

mA

V

µs

Unit

(Unit : mm)

Table 1: T

C (under the chip) measurement point is below.

7

16

Name

plate

side

Bottom

view

13

Y

X

PM450CLA120

PM450CLA120

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