MT18HVF12872PY-667D1

PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
10 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Registers
Registers
Table 9: Register ( uses SSTU32865 devices)
Parameter Symbol Pins Condition Min Max Units
DC high-level
input voltage
V
IH(DC) Address,
Control,
Command
SSTL_18 VREF(DC) +125 VDDQ + 250 mV
DC low-level
input voltage
V
IL(DC) Address,
Control,
Command
SSTL_18 0 VREF(DC) - 125 mV
AC high-level
input voltage
V
IH(AC) Address,
Control,
Command
SSTL_18 VREF(DC) + 250 VDD mV
AC low-level
input voltage
V
IL(AC) Address,
Control,
Command
SSTL_18 0 VREF(DC) - 250 mV
Output high voltage
V
OH Parity output LVCMOS 1.2 mV
Output low voltage
V
OL Parity output LVCMOS 0.5 mV
Input current
I
I All pins VI = VDDQ or VSSQ–5 5µA
Static standby
I
DD All pins RESET# = VSSQ (I/O = 0) 100 µA
Static operating
I
DD All pins RESET# = VSSQ;
V
I = VIH(AC) or VIL(DC)
I/O = 0
40mA µA
Dynamic operating –
clock tree
I
DDD N/A RESET# = VDD, VI = VIH(AC) or
VIL(AC), I0 = 0; CK and CK#
switching 50% duty cycle
Varies by mfr µA
Dynamic operating
(per each input)
I
DDD N/A RESET# = VDD, VI = VIH(AC) or
VIL(AC), I0 = 0; CK and CK#
switching 50% duty cycle;
One data input switching at
t
CK/2, 50% duty cycle
Varies by mfr µA
Input capacitance
(per device, per pin)
C
I All inputs
except RESET#
VI = VREF ±250mV;
V
DDQ = 1.8V
2.5 3.5 pF
Input capacitance
(per device, per pin)
RESET# V
I = VDDQ or VSSQ–Varies by mfrpF
PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
11 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
PLL
PLL
Notes: 1. Timing and switching specifications for the PLL listed above are critical for proper operation
of the DDR2 SDRAM Registered DIMMs. These are meant to be a subset of the parameters
for the specific device used on the module. Detailed information for this PLL is available in
JEDEC Standard JESD82.
Table 10: PLL (uses a 97U877B device)
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltage
V
IH RESET# LVCMOS 0.65 × VDD –mV
DC low-level input voltage
V
IL RESET# LVCMOS 0.35 × VDD mV
Input voltage (limits)
V
IN RESET#, CK, CK# –0.3 VDDQ + 0.3 mV
DC high-level input voltage
V
IH CK, CK# Differential Input 0.65 × VDD –mV
DC low-level input voltage
V
IL CK, CK# Differential Input 0.35 × VDD mV
Input differential-pair cross
voltage
V
IX CK, CK# Differential Input (VDDQ/2) -
0.15
(VDDQ/2) +
0.15
V
Input differential voltage
V
ID(DC) CK, CK# Differential Input 0.3 VDDQ + 0.4 V
Input differential voltage
V
ID(AC) CK, CK# Differential Input 0.6 VDDQ + 0.4 V
Input current
I
I RESET# VI = VDDQ or VSSQ –10 10 µA
CK, CK# V
I = VDDQ or VSSQ –250 250 µA
Output disabled current
I
ODL RESET# = VSSQ; VI = VIH(AC) or
VIL(DC)
100 µA
Static supply current
I
DDLD CK = CK# = LOW 500 uA
Dynamic supply
I
DD N/A CK, CK# = 270 MHz, all
outputs open
(not connected to PCB)
–300mA
Input capacitance
C
IN Each input VI = VDDQ or VSSQ23pF
Table 11: PLL Clock Driver Timing Requirements and Switching Characteristics
Note: 1
Parameter Symbol
0°C T
OPR
+55°C
VDD = +1.8V ±0.1V
UnitsMin Max
Stabilization time
t
L– 15µs
Input clock slew rate
t
LS
I
1.0 4 V/ns
SSC modulation frequency
30 33 kHZ
SSC clock input frequency deviation
0.0 –0.50 %
PLL loop bandwidth (-3dB from unity gain)
2.0 MHz
PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
12 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1
and the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tor, and the EEPROM does not respond to its slave address.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 KHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 KHz
I
CC
W
23mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 KHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4

MT18HVF12872PY-667D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 1GB 240RDIMM
Lifecycle:
New from this manufacturer.
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