MT18HVF6472Y-53EB1

PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
13 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Serial Presence-Detect
Table 14: Serial Presence-Detect Matrix
“1”/“0”: serial data, “driven to HIGH”/“driven to LOW”
Byte Description
Entry
(Version)
MT18HVF12872/
MT18HVF12872P
0
Number of SPD bytes used by Micron
128 80
1
Total number of bytes in SPD device
256 08
2
Fundamental memory type
DDR2 SDRAM 08
3
Number of row addresses on assembly
13, 14 0E
4
Number of column addresses on assembly
10 0B
5
DIMM height and module ranks
17.9mm, single rank 00
6
Module data width
72 48
7
Module data width (continued)
000
8
Module voltage interface levels
SSTL 1.8V 05
9
SDRAM cycle time,
t
CK
(CL = MAX value, see byte 18)
-667
-53E
-40E
30
3D
50
10
SDRAM access from clock,
t
AC
(CL = MAX value, see byte 18)
-667
-53E
-40E
45
50
60
11
Module configuration type
ECC/ECC and parity 02/06
12
Refresh rate/type
7.81µs/SELF 82
13
SDRAM device width (primary SDRAM)
404
14
Error-checking SDRAM data width
404
15
Reserved
00
16
Burst lengths supported
4, 8 0C
17
Number of banks on SDRAM device
4 or 8 08
18
CAS latencies supported
-667 (5, 4, 3)
-53E/-40E (4, 3)
38
18
19
Module thickness
01
20
DDR2 DIMM type
Registered DIMM 01
21
SDRAM module attributes
04
22
SDRAM device attributes: weak driver (01) or 50Ω ODT (03)
-667
-53E/-40E
03
01
23
SDRAM cycle time,
t
CK, MAX CL - 1
-667
-53E/-40E
3D
50
24
SDRAM access from CK,
t
AC, MAX CL - 1
-667
-53E
-40E
45
50
60
25
SDRAM cycle time,
t
CK, MAX CL - 2
-667
-53E/-40E(N/S)
50
00
26
SDRAM access from CK,
t
AC, MAX CL - 2
-667
-53E/-40E(N/S)
45
00
27
MIN row precharge time,
t
RP
3C
28
MIN row active to row active,
t
RRD
1E
29
MIN RAS# to CAS# delay,
t
RCD
3C
30
MIN RAS# pulse width,
t
RAS (see note 1)
-667/-53E
-40E
2D
28
31
Module rank density
1GB 01
PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
14 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Serial Presence-Detect
Notes: 1. The
t
RAS SPD value shown is based on the JEDEC standard value of 45ns; the actual device
specification is
t
RAS = 40ns.
32
Address and command setup time,
t
IS
b
-667
-53E
-40E
20
25
35
33
Address and command hold time,
t
IH
b
-667
-53E
-40E
27
37
47
34
Data/data mask input setup time,
t
DS
b
-667/-53E
-40E
10
15
35
Data/data mask input hold time,
t
DH
b
-667
-53E
-40E
17
22
27
36
Write recovery time,
t
WR
3C
37
Write to read CMD delay,
t
WTR
-667/-53E
-40E
1E
28
38
Read to precharge CMD delay,
t
RTP
1E
39
Memory analysis probe
00
40
Extension for bytes 41 and 42
00
41
MIN active auto refresh time,
t
RC
-667/-53E
-40E
3C
37
42
MIN auto refresh to active/
auto refresh command period,
t
RFC
69
43
SDRAM device MAX cycle time,
t
CKMAX
80
44
SDRAM device MAX DQS–DQ skew time,
t
DQSQ
-667
-53E
-40E
18
1E
23
45
SDRAM device MAX read data hold skew factor,
t
QHS
-667
-53E
-40E
22
28
2D
46
PLL relock time
0F
47–61
Optional features, not supported
00
62
SPD revision
Release 1.2 12
63
Checksum for bytes 0–62
-667
-53E
-40E
8D/91
38/3C
9F/A3
64
Manufacturer’s JEDEC ID code
MICRON 2C
65-71
Manufacturer’s JEDEC ID code
(continued) FF
72
Manufacturing location
01–12 01–0C
73-90
Module part number (ASCII)
Variable data
91
PCB identification code
1–9 01–09
92
Identification code (continued)
000
93
Year of manufacture in BCD
Variable data
94
Week of manufacture in BCD
Variable data
95-98
Module serial number
Variable data
99-127
Manufacturer-specific data (RSVD)
Table 14: Serial Presence-Detect Matrix (continued)
“1”/“0”: serial data, “driven to HIGH”/“driven to LOW”
Byte Description
Entry
(Version)
MT18HVF12872/
MT18HVF12872P
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the prop-
erty of their respective owners. This data sheet contains minimum and maximum limits specified over the complete
power supply and temperature range for production devices. Although considered final, these specifications are sub-
ject to change, as further product development and data characterization sometimes occur.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Module Dimensions
PDF: 09005aef82255aba/Source: 09005aef82255a83 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
15 ©2003 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 4: 240-Pin DDR2 DIMM
Notes: 1. All dimensions are in millimeters (inches).
2. The dimensional diagram is for reference only. Refer to the MO document for complete
design dimensions.
18.05 (0.711)
17.75 (0.699)
PIN 1
2.50 (0.098) D
(2X)
2.30 (0.091)
TYP
5.0 (0.250) TYP
123.0 (4.84)
TYP
1.0 (0.039)
TYP
2.20 (0.087)
TYP
0.80 (0.040)
TYP
2.00 (0.079) R
(4X)
0.75 (0.029) R
PIN 120
FRONT VIEW
133.50 (5.256)
133.20 (5.244)
63.0 (2.48)
TYP
55.0 (2.16)
TYP
10.00 (0.394)
TYP
BACK VIEW
PIN 240
PIN 121
1.37 (0.054)
1.17 (0.046)
3.99 (0.157)
MAX
1.0 (0.039)
TYP
3.05 (0.012)
TYP
70.68 (2.78)
TYP
U1
U2
U3
U4
U5
U8
U9
U10
U11
U12
U15
U17
U13
U14
U16
U6
U7
U18
U19
U20
U21

MT18HVF6472Y-53EB1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 512MB 240DIMM
Lifecycle:
New from this manufacturer.
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