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HVF18C64_128_256x72G.fm - Rev. B 5/06 EN
14 ©2003 Micron Technology, Inc. All rights reserved.
1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
Serial Presence-Detect
Notes: 1. The
t
RAS SPD value shown is based on the JEDEC standard value of 45ns; the actual device
specification is
t
RAS = 40ns.
32
Address and command setup time,
t
IS
b
-667
-53E
-40E
20
25
35
33
Address and command hold time,
t
IH
b
-667
-53E
-40E
27
37
47
34
Data/data mask input setup time,
t
DS
b
-667/-53E
-40E
10
15
35
Data/data mask input hold time,
t
DH
b
-667
-53E
-40E
17
22
27
36
Write recovery time,
t
WR
3C
37
Write to read CMD delay,
t
WTR
-667/-53E
-40E
1E
28
38
Read to precharge CMD delay,
t
RTP
1E
39
Memory analysis probe
00
40
Extension for bytes 41 and 42
00
41
MIN active auto refresh time,
t
RC
-667/-53E
-40E
3C
37
42
MIN auto refresh to active/
auto refresh command period,
t
RFC
69
43
SDRAM device MAX cycle time,
t
CKMAX
80
44
SDRAM device MAX DQS–DQ skew time,
t
DQSQ
-667
-53E
-40E
18
1E
23
45
SDRAM device MAX read data hold skew factor,
t
QHS
-667
-53E
-40E
22
28
2D
46
PLL relock time
0F
47–61
Optional features, not supported
00
62
SPD revision
Release 1.2 12
63
Checksum for bytes 0–62
-667
-53E
-40E
8D/91
38/3C
9F/A3
64
Manufacturer’s JEDEC ID code
MICRON 2C
65-71
Manufacturer’s JEDEC ID code
(continued) FF
72
Manufacturing location
01–12 01–0C
73-90
Module part number (ASCII)
Variable data
91
PCB identification code
1–9 01–09
92
Identification code (continued)
000
93
Year of manufacture in BCD
Variable data
94
Week of manufacture in BCD
Variable data
95-98
Module serial number
Variable data
99-127
Manufacturer-specific data (RSVD)
–
Table 14: Serial Presence-Detect Matrix (continued)
“1”/“0”: serial data, “driven to HIGH”/“driven to LOW”
Byte Description
Entry
(Version)
MT18HVF12872/
MT18HVF12872P