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MMDT3906V-7

P1-P3P4-P4
MMDT3906V
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 20
• Terminals: Lead bearing terminal plating available. See
Ordering information Page 3
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.003 grams (approximate)
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
A
M
L
B
C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
See Note 1
C
1
B
2
E
2
C
2
E
1
B
1
Maximum Ratings @T
A
= 25°C unless otherwise specified
DS30467 Rev. 8 - 2 1 of 4
www.diodes.com
MMDT3906V
© Diodes Incorporated
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current - Continuous
I
C
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25
o
C P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25
o
C
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Electrical Characteristics @T
A
= 25°C unless otherwise specified
DS30467 Rev. 8 - 2 2 of 4
www.diodes.com
MMDT3906V
© Diodes Incorporated
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
⎯
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -10μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
⎯
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12
kΩ
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100 400
⎯
Output Admittance
h
oe
3.0 60
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF
⎯
4.0 dB
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35 ns
Rise Time
t
r
⎯
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
f
⎯
75 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
1
100
10
0.1
1
10
100
C
, I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
-50
050100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1, Derating Curve - Total Device
A
°
150
P
,
P
O
WE
R
DISSI
P
ATI
O
N (mW)
d
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current
C
0.01
0.1
10
1
1
10
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
(V)
SATURATION VOLTAGE
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
0.5
0.6
0.7
0.8
0.9
1.0
110
V , BASE-EMI
100
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
C
I
I
C
B
= 10
Ordering Information (Note 7)
NEW PRODUCT
DS30467 Rev. 8 - 2 3 of 4
www.diodes.com
MMDT3906V
© Diodes Incorporated
Device
Packaging Shipping
MMDT3906V-7
SOT-563 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAR YM
KAR = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
P1-P3P4-P4

MMDT3906V-7

Mfr. #:
Buy MMDT3906V-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP BIPOLAR
Lifecycle:
New from this manufacturer.
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