BD8151EFV, BD8157EFV
Technical Note
13/17
www.rohm.com
2009.07 - Rev.B
© 2009 ROHM Co., Ltd. All rights reserved.
Application Examples
* Although ROHM is sure that the application examples are recommendable ones, further check the characteristics of
components that require high precision before using them.When a circuit is used modifying the externally connected circuit
constant, be sure to decide allowing sufficient margins considering the dispersion of values by external parts as well as our
IC including not only the static but also the transient characteristic.
For the patent, we have not acquired the sufficient confirmation. Please acknowledge the status.
(1) When the charge pump is removed from the DC/DC converter to make it 3-channel output mode:
It is possible to create the charge pump by using the switching operation of DC/DC converter. When the application shown
in the following diagram is used, 1-channel DC/DC converter output, 1-channel positive side charge pump and 1-channel
negative side charge pump can be output as a total of 3 channels.
(2) When the output voltage is set to 0 V:
Since the switch does not exist between the input and output in the application using the step-up type DC/DC converter,
the output voltage is generated even if the IC is turned off. When it is intended to keep the output voltage 0 V until IC
operates, insert the switch as shown in the following circuit diagram.
Fig. 38 3 ch Application Circuit Diagram Example
Fig. 39 Switch Application Circuit Diagram Example
10uF
VOUT
RB161M-20
VCOM
V1
V2
V3
V4
10uH
10uF
VCC
2.5V
COMIN
13
12
11
6
7
8
9
10
2
3
4
5
1
SLOPE
OSC
UVLO
TSD
+
SET
RESET
SDWN
LOGIC
CURRENT
SENSE
+
-
ERR
20
19
18
16
15
14
17
BUFFER SUPPLY
1.245V
SW
VCC
ENB
FCLK
VS
IN1
IN2
IN3
IN4
PGND
GND
FB
COMP
SS
VCOM
OUT1
OUT2
OUT3
OUT4
PWM
+
-
OCP
DRV
START
SOFT
TOP VIEW
0.1uF
0.1uF
1uF 1uF
0.1uF
1uF
1uF
VGH
1uF
VGL
DAN217U
2SD2657k
DAN217U
2SB1695k
UDZ
Series
UDZ
Series
10uF
Vo
RB161M-20
VCOM
V1
V2
V3
V4
10uH
10uF
VCC
2.5V
COMIN
13
12
11
6
7
8
9
10
2
3
4
5
1
SLOPE
OSC
UVLO
TSD
+
SET
RESET
SDWN
LOGIC
CURRENT
SENSE
+
-
ERR
20
19
18
16
15
14
17
BUFFER SUPPLY
1.245V
SW
VCC
ENB
FCLK
VS
IN1
IN2
IN3
IN4
PGND
GND
FB
COMP
SS
VCOM
OUT1
OUT2
OUT3
OUT4
PWM
+
-
OCP
DRV
START
SOFT
TOP VIEW
BD8151EFV, BD8157EFV
Technical Note
14/17
www.rohm.com
2009.07 - Rev.B
© 2009 ROHM Co., Ltd. All rights reserved.
I/O Equivalent Circuit Diagrams
1.SW 11.OUT4 12.OUT3 13.OUT2 14.OUT1 15.VCOM
3.ENB 4.FCLK 16.SS
6.COMIN 7.IN1 8.IN2 9.IN3 10.IN4 17.COMP
18.FB
Fig.40 I/O Equivalent Circuit Diagrams
Vcc
200k
VS
VS
Vcc
Vcc
BD8151EFV, BD8157EFV
Technical Note
15/17
www.rohm.com
2009.07 - Rev.B
© 2009 ROHM Co., Ltd. All rights reserved.
Notes for use
1) Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may
result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such
damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a special
mode where the absolute maximum ratings may be exceeded is anticipated.
2) GND potential
Ensure a minimum GND pin potential in all operating conditions.
3) Setting of heat
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Pin short and mistake fitting
Use caution when orienting and positioning the IC for mounting on an application board. Improper mounting may result in
damage to the IC. Shorts between output pins or between output pins and the power supply and GND pins caused by the
presence of a foreign object may result in damage to the IC.
5) Actions in strong magnetic field
Use caution when using the IC in the presence of a strong magnetic field as doing so may cause the IC to malfunction.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure,
and use similar caution when transporting or storing the IC. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process.
7) Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring patterns of any external components.
8) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements. For example, when the resistors and transistors are connected to the pins as shown in Fig. 41, a
parasitic diode or a transistor operates by inversing the pin voltage and GND voltage.
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result
of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will
trigger the operation of parasitic elements, such as the application of voltages lower than the GND (P substrate) voltage to
input and output pins.
9) Overcurrent protection circuits
An overcurrent protection circuit designed according to the output current is incorporated for the prevention of IC
destruction that may result in the event of load shorting. This protection circuit is effective in preventing damage due to
sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous
operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capacity
has negative characteristics to temperatures.
10) Thermal shutdown circuit (TSD)
This IC incorporates a built-in TSD circuit for the protection from thermal destruction. The IC should be used within the
specified power dissipation range. However, in the event that the IC continues to be operated in excess of its power
dissipation limits, the attendant rise in the chip's temperature Tj will trigger the temperature protection circuit to turn off
all
output p
o
wer elements. The circuit automatically resets once the chip's temperature Tj drops.
Operation of the TSD circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs
should never make use of the TSD circuit.
11) Testing on application boards
At the time of inspection of the installation boards, when the capacitor is connected to the pin with low impedance, be sure
to discharge electricity per process because it may load stresses to the IC. Always turn the IC's power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as
an antistatic measure, and use similar caution when transporting or storing the IC.
Fig.41 Example of a Simple Monolithic IC Architecture
Parasitic
elements
(Pin B)
GND
C
B
E
(Pin A)
GND
N
P
N N
P P
Resistor
Parasitic
element
P
Parasitic
element
GND
(Pin A)
GND
N
P
N N
P
P
Parasitic elements
P substrate
(Pin B)
C
B
E
Transistor (NPN)
N
GND

BD8151EFV-E2

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
LCD Drivers REGULATOR
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