OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FDH27N50

P1-P3P4-P6
©2002 Fairchild Semiconductor Corporation
August 2002
FDH27N50 Rev. A2
FDH27N50
FDH27N50
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive Require-
ment
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced r
DS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature
Absolute Maximum Ratings TC = 25
o
C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 500 V
V
GS
Gate to Source Voltage ±30 V
I
D
Drain Current
27 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 19 A
Pulsed (Note 1) 108 A
P
D
Power dissipation
Derate above 25
o
C
450
3
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Soldering Temperature for 10 seconds 300 (1.6mm from case)
o
C
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)
R
θJC
Thermal Resistance Junction to Case 0.33
o
C/W
R
θCS
Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP
o
C/W
R
θJA
Thermal Resistance Junction to Ambient 40
o
C/W
D
G
S
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
JEDEC TO-247
Package
Symbol
©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2
FDH27N50
Package Marking and Ordering Information
Electrical Characteristics
Tc = 25°C (unless otherwise noted)
Statics
Dynamics
Avalanche Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
J
= 25°C, L = 7mH, I
AS
= 27A
Device Marking Device Package Reel Size Tape Width Quantity
FDH27N50 FDH27N50 TO-247 Tube - 30
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 500 - - V
∆B
VDSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Reference to 25
o
C
I
D
= 1mA
-0.64-V/°C
r
DS(ON)
Drain to Source On-Resistance V
GS
= 10V, I
D
= 13.5A - 0.17 0.19 Ω
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA2.03.34.0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V T
C
=25
o
C- - 25
µA
V
GS
= 0V T
C
= 150
o
C- - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±30V - - ±100 nA
g
fs
Forward Transconductance V
DS
= 50V, I
D
= 13.5A 11 - - S
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 10V
V
DS
= 400V
I
D
= 27A
-5667nC
Q
gs
Gate to Source Gate Charge - 17 20 nC
Q
gd
Gate to Drain “Miller” Charge - 18 22 nC
t
d(ON)
Turn-On Delay Time
V
DD
= 250V
I
D
= 27A
R
G
= 4.3Ω
R
D
= 9.3Ω
-14-ns
t
r
Rise Time - 54 - ns
t
d(OFF)
Turn-Off Delay Time - 47 - ns
t
f
Fall Time - 54 - ns
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-3550- pF
C
OSS
Output Capacitance - 409 - pF
C
RSS
Reverse Transfer Capacitance - 22 - pF
E
AS
Single Pulse Avalanche Energy (Note 2) 2552 - - mJ
I
AR
Avalanche Current - - 27 A
I
S
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
--27A
I
SM
Pulsed Source Current
(Note 1)
(Body Diode)
- - 108 A
V
SD
Source to Drain Diode Voltage I
SD
= 27A - 0.89 1.2 V
t
rr
Reverse Recovery Time I
SD
= 27A, dI
SD
/dt = 100A/µs - 563 714 ns
Q
RR
Reverse Recovered Charge I
SD
= 27A, dI
SD
/dt = 100A/µs- 9.2 14 µC
D
G
S
©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2
FDH27N50
Typical Characteristics
Figure 1. Output Characteristics Figure 2. Output Characteristics
Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperatrue
Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant
Gate Current
1
10
100
200
1 10 100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
DESCENDING
10V
7V
6V
5.5V
5V
4.5V
T
J
= 25
o
C
1
10
100
200
110100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN TO SOURCE CURRENT (A)
T
J
= 175
o
C
V
GS
DESCENDING
10V
6V
5.5V
5V
4.5V
4V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0
10
20
30
40
50
60
70
80
90
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
6.5
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 175
o
C T
J
= 25
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 80V
0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125 150 175
3.5
NORMALIZED DRAIN to SOURCE ON RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 13.5A
10
100
1000
10000
110100
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
0
6
8
12
0 30405060
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
I
D
= 27A
10
70
250V
400V
100V
2010
4
2
P1-P3P4-P6

FDH27N50

Mfr. #:
Buy FDH27N50
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 500V 27A TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet