PBSS4350D,115

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DATA SHEET
Product data sheet
Supersedes data of 2001 Jan 26
2001 Jul 13
DISCRETE SEMICONDUCTORS
PBSS4350D
50 V low V
CEsat
NPN transistor
fpa
ge
M3D302
2001 Jul 13 2
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC convertor applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350D 43
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
handbook, halfpage
MAM436Top view
1, 2, 5, 6
4
3
132
4
56
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 50 V
I
CM
peak collector current 5 A
R
CEsat
equivalent on-resistance <145 mΩ

PBSS4350D,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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