2001 Jul 13 3
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 3 A
I
CM
peak collector current − 5 A
I
BM
peak base current − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 600 mW
T
amb
≤ 25 °C; note 2 − 750 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 208 K/W
in free air; note 2 160 K/W