DPG80C400HB Datasheet DPG80C400HB | P1-P3

DPG80C400HB

Low Loss and Soft Recovery

High Performance Fast Recovery Diode

Common Cathode

HiPerFRED²

1 2

3

Part number

DPG80C400HB

Backside: cathode

FAV

rr

tns45

RRM

40

400

=

V= V

I= A

2x

Features / Advantages: Applications: Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

TO-247

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

IXYS reserves the right to change limits, conditions and dimensions.

20131101aData according to IEC 60747and per semiconductor unless otherwise specified

DPG80C400HB

n

s

4

A

T

VJ

=°C

reverse recovery time

A

8.5

45

80

n

s

I

RM

max. reverse recovery current

I

F

=A;40

25

T= °C

VJ

-di

F

=A/µs200/dtt

rr

V

R

=V270

T

VJ

=°C25

T= °C

VJ

V = V

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.43

R 0.7 K/

W

R

min.

40

V

RSM

V

1T = 25°C

VJ

T = °C

VJ

m

A

0.4V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

135

P

tot

215

W

T = 25°C

C

R K/

W

40

400

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Uni

t

1.69

T = 25°C

VJ

150

V

F0

V

0.79T = °C

VJ

175

r

F

7.1

m

Ω

V

1.14T = °C

VJ

I = A

F

V

40

1.44

I = A

F

80

I = A

F

80

threshold voltage

slope resistance

for power loss calculation only

µ

A

150

V

RRM

V

400

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

46

j

unction capacitance

V = V200 T = 25°Cf = 1 MHz

R

VJ

p

F

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

175

400

A

400

FAV

d =rectangular 0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

400

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20131101aData according to IEC 60747and per semiconductor unless otherwise specified

DPG80C400HB

Ratings

Product Mar

k

in

g

Date Code

Part No.

Logo

IXYS

abcd

Assembly Code

Zyyww

Assembly Line

XXXXXXXXX

D

P

G

80

C

400

HB

Part number

Diode

HiPerFRED

extreme fast

Common Cathode

TO-247AD (3)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm1.2

mounting torque

0.8

T

VJ

°C175

virtual junction temperature

-55

Weight g6

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

F

C

N120

mounting force with clip

20

I

RMS

RMS current

70 A

per terminal

150-55

TO-247

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

1

)

DPG80C400HB 506875Tube 30DPG80C400HBStandard

T

stg

°C150

storage temperature

-55

threshold voltage

V0.79

mΩ

V

0 max

R

0 max

slope resistance *

4.5

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Fast

Diode

175 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20131101aData according to IEC 60747and per semiconductor unless otherwise specified

DPG80C400HB

DPG80C400HB

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