BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 5 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24
T
j
=25
°
C unless otherwise specified.
BZB84-
Bxxx
Working voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
Reverse current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
=1mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Min Max Max Max
2V4 2.35 2.45 600 100 50 1 −3.5 0 450 6.0
2V7 2.65 2.75 600 100 20 1 −3.5 0 450 6.0
3V0 2.94 3.06 600 95 10 1 −3.5 0 450 6.0
3V3 3.23 3.37 600 95 5 1 −3.5 0 450 6.0
3V6 3.53 3.67 600 90 5 1 −3.5 0 450 6.0
3V9 3.82 3.98 600 90 3 1 −3.5 0 450 6.0
4V3 4.21 4.39 600 90 3 1 −3.5 0 450 6.0
4V7 4.61 4.79 500 80 3 2 −3.5 0.2 300 6.0
5V1 5.00 5.20 480 60 2 2 −2.7 1.2 300 6.0
5V6 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0
6V2 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0
6V8 6.66 6.94 80 15 2 4 1.2 4.5 200 6.0
7V5 7.35 7.65 80 15 1 5 2.5 5.3 150 4.0
8V2 8.04 8.36 80 15 0.70 5 3.2 6.2 150 4.0
9V1 8.92 9.28 100 15 0.50 6 3.8 7.0 150 3.0
10 9.80 10.20 150 20 0.20 7 4.5 8.0 90 3.0
11 10.80 11.20 150 20 0.10 8 5.4 9.0 85 2.5
12 11.80 12.20 150 25 0.10 8 6.0 10.0 85 2.5
13 12.70 13.30 170 30 0.10 8 7.0 11.0 80 2.5
15 14.70 15.30 200 30 0.05 10.5 9.2 13.0 75 2.0
16 15.70 16.30 200 40 0.05 11.2 10.4 14.0 75 1.5
18 17.60 18.40 225 45 0.05 12.6 12.4 16.0 70 1.5
20 19.6 20.4 225 55 0.05 14.0 14.4 18.0 60 1.5
22 21.6 22.4 250 55 0.05 15.4 16.4 20.0 60 1.25
24 23.5 24.5 250 70 0.05 16.8 18.4 22.0 55 1.25