OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BZB84-C47,215

P1-P3P4-P6P7-P9P10-P12P13-P15
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 6 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
Table 9. Characteristics per type; BZB84-B27 to BZB84-B75
T
j
=25
°
C unless otherwise specified.
BZB84-
Bxxx
Working voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
Reverse current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=2mA I
Z
= 0.5 mA I
Z
=2mA I
Z
=2mA
Min Max Max Max Max V
R
(V) Min Max Max Max
27 26.5 27.5 300 80 0.05 18.9 21.4 25.3 50 1.00
30 29.4 30.6 300 80 0.05 21.0 24.4 29.4 50 1.00
33 32.3 33.7 325 80 0.05 23.1 27.4 33.4 45 0.90
36 35.3 36.7 350 90 0.05 25.2 30.4 37.4 45 0.80
39 38.2 39.8 350 130 0.05 27.3 33.4 41.2 45 0.70
43 42.1 43.9 375 150 0.05 30.1 37.6 46.6 40 0.60
47 46.1 47.9 375 170 0.05 32.9 42.0 51.8 40 0.50
51 50.0 52.0 400 180 0.05 35.7 46.6 57.2 40 0.40
56 54.9 57.1 425 200 0.05 39.2 52.2 63.8 40 0.30
62 60.8 63.2 450 215 0.05 43.4 58.8 71.6 35 0.30
68 66.6 69.4 475 240 0.05 47.6 65.6 79.8 35 0.25
75 73.5 76.5 500 255 0.05 52.5 73.4 88.6 35 0.20
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 7 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24
T
j
=25
°
C unless otherwise specified.
BZB84-
Cxxx
Working voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
Reverse current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
=1mA I
Z
=5mA I
Z
=5mA
Min Max Max Max Max V
R
(V) Min Max Max Max
2V4 2.2 2.6 600 100 50 1 −3.5 0 450 6.0
2V7 2.5 2.9 600 100 20 1 −3.5 0 450 6.0
3V0 2.8 3.2 600 95 10 1 −3.5 0 450 6.0
3V3 3.1 3.5 600 95 5 1 −3.5 0 450 6.0
3V6 3.4 3.8 600 90 5 1 −3.5 0 450 6.0
3V9 3.7 4.1 600 90 3 1 −3.5 0 450 6.0
4V3 4.0 4.6 600 90 3 1 −3.5 0 450 6.0
4V7 4.4 5.0 500 80 3 2 −3.5 0.2 300 6.0
5V1 4.8 5.4 480 60 2 2 −2.7 1.2 300 6.0
5V6 5.2 6.0 400 40 1 2 −2.0 2.5 300 6.0
6V2 5.8 6.6 150 10 3 4 0.4 3.7 200 6.0
6V8 6.4 7.2 80 15 2 4 1.2 4.5 200 6.0
7V5 7.0 7.9 80 15 1 5 2.5 5.3 150 4.0
8V2 7.7 8.7 80 15 0.70 5 3.2 6.2 150 4.0
9V1 8.5 9.6 100 15 0.50 6 3.8 7.0 150 3.0
10 9.4 10.6 150 20 0.20 7 4.5 8.0 90 3.0
11 10.4 11.6 150 20 0.10 8 5.4 9.0 85 2.5
12 11.4 12.7 150 25 0.10 8 6.0 10.0 85 2.5
13 12.4 14.1 170 30 0.10 8 7.0 11.0 80 2.5
15 13.8 15.6 200 30 0.05 10.5 9.2 13.0 75 2.0
16 15.3 17.1 200 40 0.05 11.2 10.4 14.0 75 1.5
18 16.8 19.1 225 45 0.05 12.6 12.4 16.0 70 1.5
20 18.8 21.2 225 55 0.05 14.0 14.4 18.0 60 1.5
22 20.8 23.3 250 55 0.05 15.4 16.4 20.0 60 1.25
24 22.8 25.6 250 70 0.05 16.8 18.4 22.0 55 1.25
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 8 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 µs; square wave; T
j
=25°C prior to surge
Table 11. Characteristics per type; BZB84-C27 to BZB84-C75
T
j
=25
°
C unless otherwise specified.
BZB84-
Cxxx
Working voltage
V
Z
(V)
Differential
resistance
r
dif
(Ω)
Reverse current
I
R
(µA)
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=2mA I
Z
= 0.5 mA I
Z
=2mA I
Z
=2mA
Min Max Max Max Max V
R
(V) Min Max Max Max
27 25.1 28.9 300 80 0.05 18.9 21.4 25.3 50 1.00
30 28.0 32.0 300 80 0.05 21.0 24.4 29.4 50 1.00
33 31.0 35.0 325 80 0.05 23.1 27.4 33.4 45 0.90
36 34.0 38.0 350 90 0.05 25.2 30.4 37.4 45 0.80
39 37.0 41.0 350 130 0.05 27.3 33.4 41.2 45 0.70
43 40.0 46.0 375 150 0.05 30.1 37.6 46.6 40 0.60
47 44.0 50.0 375 170 0.05 32.9 42.0 51.8 40 0.50
51 48.0 54.0 400 180 0.05 35.7 46.6 57.2 40 0.40
56 52.0 60.0 425 200 0.05 39.2 52.2 63.8 40 0.30
62 58.0 66.0 450 215 0.05 43.4 58.8 71.6 35 0.30
68 64.0 72.0 475 240 0.05 47.6 65.6 79.8 35 0.25
75 70.0 79.0 500 255 0.05 52.5 73.4 88.6 35 0.20
(1) T
j
=25°C (prior to surge)
(2) T
j
= 150 °C (prior to surge)
T
j
=25°C
Fig 1. Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
Fig 2. Per diode: Forward current as a function of
forward voltage; typical values
mbg801
10
3
1
t
p
(ms)
P
ZSM
(W)
10
10
2
10
−1
10
1
(1)
(2)
V
F
(V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
P1-P3P4-P6P7-P9P10-P12P13-P15

BZB84-C47,215

Mfr. #:
Buy BZB84-C47,215
Manufacturer:
Nexperia
Description:
Zener Diodes DIODE ZENER DL 47V 300MW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet