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FMMT619-G

P1-P3P4-P6
Features
-Low Saturation Voltage.
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature range
Units
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
TSTG
Value
50
50
5.0
2
350
357
150
-55 to +150
V
V
V
A
mW
°C/W
°C
°C
1
Base
2
Emitter
Collector
3
Diagram:
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
Maximum Ratings (at TA=25°C unless otherwise noted)
FMMT619-G (NPN)
RoHS Device
General Purpose Transistor
QW-BTR55
Page 1
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Maximum power dissipation (Note 1)
Thermal resistance junction from to ambient (Note 1)
PCM
RθJA
625
200
mW
°C/W
Notes:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15*15*0.6mm.
Electrical Characteristics (at TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage (Note 1)
Emitter-Base breakdown voltage
Base-Emitter saturation voltage (Note 1)
Transition frequency
Turn-on time
Turn-off time
Units
Symbol
Parameter
Min.Conditions
IC=100μA, IE=0
IC=10mA, IB=0
IE=100μA, IC=0
IC=0.1A, IB=10mA
IC=1A, IB=10mA
IB1=-IB2=10mA
VCC=10V, IC=1A
Max.
V(BR)CBO
VCE(sat)2
fT
t(on)
t(off)
V(BR)CEO
V(BR)EBO
VBE(sat)
50
50
5
100
DC current gain (Note 1)
VCE=2V, IC=1A
VCE=2V, IC=0.2A
VCE=2V, IC=2A
100
300
200
40
20
1
1
170
750
V
V
V
mV
V
Collector cut-off current
Emitter cut-off current
VCB=40V, IE=0
VEB=4V, IC=0
ICBO
IEBO
100
100
nA
nA
MHz
nS
nS
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
hFE(4)
VCE=10V, IC=50mA
f=100MHz
General Purpose Transistor
hFE(1)
hFE(2)
hFE(3)
VCE=2V, IC=10mA
200
hFE(5)
VCE=2V, IC=6A
VCE(sat)1
VCE(sat)3
IC=2A, IB=100mA
200
220
Collector-Emitter saturation voltage
(Note 1)
VBE(on)
Base-Emitter on voltage (Note 1)
IC=2A, IB=50mA
IC=2A, VCE=2V
VCB=10V, f=1MHz
Output capacitance
Cob
V
20
pF
Typ.
mV
mV
- -
-
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
-
-
--
-
-
QW-BTR55
Page 2
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
RATING AND CHARACTERISTIC CURVES (FMMT619-G)
2000
Collector Current, Ic (mA)
0
1
800
10
1000
100
200
400
600
1000
β = 40
Fig.6 - Cob/Cib — VCB/VEB
Capacitance, C (pF)
Reverse Voltge, V (V)
General Purpose Transistor
Fig.1 - Static Characteristic
Collector Current, IC (mA)
Collector-Emitter Voltage, VCE (V)
0
100
200
300
500
400
1
2
3 4 5
6
COMMON
EMITTER
Ta=25°C
0
0.5mA
IB=0.05mA
0.45mA
0.4mA
0.35mA
0.3mA
0.25mA
0.2mA
0.15mA
0.1mA
Collector Current, Ic (mA)
DC Current Gain, hFE
1 10
2000
0
Fig.2 - hFE — IC
1200
200
600
400
800
Ta=100°C
Ta=25°C
VCE=2V
100
1000
1000
Fig.3 - VBEsat — IC
B
as
e
-E
mi
tte
r S
a
t
u
ra
t
io
n
Vo
lt
a
g
e, V
B
E
sat
(
mV)
Ta=100°C
Ta= 25°C
Collector Current, Ic (mA)
0
300
400
200
1
10 100 1000
100
β = 20
C
o
lle
c
to
r
-
Em
i
t
t
e
r
S
a
tur
a
t
i
o
n
V
o
lta
g
e
, VC
Es
at (m
V)
Fig.4 - VCEsat — IC
2000
Ta= 25°C
Ta=100°C
Fig.5 - FT — IC
Collector Current, IC (mA)
40 8060
0
100
Transtion frequency, fT (MHZ)
100
150
200
50
0
20
Ta= 25°C
VCE=10V
Cib
Cob
100
1000
10
0
10 20
1
0.1
f=1MHZ
IE=0/IC=0
Ta=25°C
QW-BTR55
Page 3
REV A:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
P1-P3P4-P6

FMMT619-G

Mfr. #:
Buy FMMT619-G
Manufacturer:
Comchip Technology
Description:
Bipolar Transistors - BJT NPN TRANSISTOR 2A 50V
Lifecycle:
New from this manufacturer.
Delivery:
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