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NTHD3100CT3G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
NTHD3100C/D
NTHD3100C
Power MOSFET
20 V, +3.9 A /−4.4 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Trench P−Channel for Low On Resistance
• Low Gate Charge N−Channel for Test Switching
• Pb−Free Packages are Available
Applications
• DC−DC Conversion Circuits
• Load Switch Applications Requiring Level Shift
• Drive Small Brushless DC Motors
• Ideal for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage
N−Ch
V
GS
"12
V
P−Ch "8.0
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
2.9
A
T
A
= 85°C 2.1
t ≤ 10 s T
A
= 25°C 3.9
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.2
A
T
A
= 85°C −2.3
t ≤ 10 s T
A
= 25°C −4.4
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.1
W
t ≤ 5 s 3.1
Pulsed Drain Current
(Note 1)
N−Ch
t = 10 ms
I
DM
12
A
P−Ch
t = 10 ms
−13
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
2.5 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G
D
S
N−Channel MOSFET
1
1
1
G
D
2
2
P−Channel MOSFET
S
2
http://onsemi.com
N−Channel
20 V
P−Channel
−20 V
77 mW @ 2.5 V
58 mW @ 4.5 V
64 mW @ −4.5 V
85 mW @ −2.5 V
R
DS(on)
Typ
3.9 A
−4.4 A
I
D
MAXV
(BR)DSS
C9 = Specific Device Code
M = Month Code
G = Pb−Free Package
ChipFET
CASE 1206A
STYLE 2
AND PIN A
1
8
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
2
3
45
6
7
8
PIN
CONNECTIONS
MARKING
DIAGRAM
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
C9 M
G
NTHD3100C
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
113 °C/W
Junction−to−Ambient − t ≤ 10 s (Note 2)
R
q
JA
60 °C/W
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol N/P Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 mA
20
V
P
I
D
= −250 mA
−20
Zero Gate Voltage Drain Current I
DSS
N V
GS
= 0 V, V
DS
= 16 V
T
J
= 25 °C
1.0 mA
P V
GS
= 0 V, V
DS
= −16 V −1.0
N V
GS
= 0 V, V
DS
= 16 V
T
J
= 125 °C
5.0
P V
GS
= 0 V, V
DS
= −16 V −5.0
Gate−to−Source Leakage Current I
GSS
N V
DS
= 0 V, V
GS
= ±12 V ±100
nA
P V
DS
= 0 V, V
GS
= ±8.0 V ±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
N
V
GS
= V
DS
I
D
= 250 mA
0.6 1.2
V
P
I
D
= −250 mA
−.45 −1.5
Drain−to−Source On Resistance R
DS(on)
N V
GS
= 4.5 V , I
D
= 2.9 A 58 80
mW
P V
GS
= −4.5 V , I
D
= −3.2 A 64 80
N V
GS
= 2.5 V , I
D
= 2.3 A 77 115
P V
GS
= −2.5 V, I
D
= −2.2 A 85 110
Forward Transconductance g
FS
N V
DS
= 10 V, I
D
= 2.9 A 6.0
S
P V
DS
= −10 V , I
D
= −3.2 A 8.0
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 10 V 165
pF
P V
DS
= −10 V 680
Output Capacitance C
OSS
N V
DS
= 10 V 80
P V
DS
= −10 V 100
Reverse Transfer Capacitance C
RSS
N V
DS
= 10 V 25
P V
DS
= −10 V 70
Total Gate Charge Q
G(TOT)
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 2.3
nC
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −3.2 A 7.4
Threshold Gate Charge Q
G(TH)
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 0.2
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −3.2 A 0.6
Gate−to−Source Gate Charge Q
GS
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 0.4
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −3.2 A 1.4
Gate−to−Drain “Miller” Charge Q
GD
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 2.9 A 0.7
P V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −3.2 A 2.5
3. Pulse Test: pulse width v 250 ms, duty cycle v 2%.
NTHD3100C
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued) (T
J
= 25°C unless otherwise noted)
Parameter Symbol N/P Test Conditions Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(ON)
N
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 2.9 A, R
G
= 2.5 W
6.3
ns
Rise Time t
r
10.7
Turn−Off Delay Time t
d(OFF)
9.6
Fall Time t
f
1.5
Turn−On Delay Time t
d(ON)
P
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −3.2 A, R
G
= 2.5 W
5.8
Rise Time t
r
11.7
Turn−Off Delay Time t
d(OFF)
16
Fall Time t
f
12.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
N
V
GS
= 0 V, T
J
= 25 °C
I
S
= 2.5 A 0.8 1.15
V
P I
S
= −2.5 A −0.8 −1.2
Reverse Recovery Time t
RR
N
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms
I
S
= 1.5 A 12.5
ns
P I
S
= −1.5 A 13.5
Charge Time t
a
N I
S
= 1.5 A 9.0
P I
S
= −1.5 A 9.5
Discharge Time t
b
N I
S
= 1.5 A 3.5
P I
S
= −1.5 A 4.0
Reverse Recovery Charge Q
RR
N I
S
= 1.5 A 6.0
nC
P I
S
= −1.5 A 6.5
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P8

NTHD3100CT3G

Mfr. #:
Buy NTHD3100CT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V +3.9A/-4.4A Complementary
Lifecycle:
New from this manufacturer.
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