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IXTT50P10

P1-P3P4-P4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH50P10
IXTT50P10
Fig. 11. Capacitance
100
1000
10000
-40-35-30-25-20-15-10-50
V
D S
- Volts
Capacitance - pF
C
iss
C
oss
C
rss
f
= 1MHz
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= - 50V
I
D
= - 25A
I
G
= -1mA
Fig. 7. Input Admittance
-150
-125
-100
-75
-50
-25
0
-11-10-9-8-7-6-5-4
V
G S
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-100-80-60-40-200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
-150
-125
-100
-75
-50
-25
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 125ºC
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
Z
(th) J C
-
(ºC/W)
IXYS REF: T_50P10(7B) 6-23-08-A
P1-P3P4-P4

IXTT50P10

Mfr. #:
Buy IXTT50P10
Manufacturer:
Littelfuse
Description:
MOSFET -50 Amps -100V 0.055 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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