MTP3055V Datasheet SQ2361EES-T1-GE3, MTP3055V | P1-P3

SQ2361EES

www.vishay.com

Vishay Siliconix

S12-2198-Rev. C, 24-Sep-12

1

Document Number: 70953

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET

®

Power MOSFET

• Typical ESD Protection: 800 V

• AEC-Q101 Qualified

•100 % R

g

and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

PRODUCT SUMMARY

V

DS

(V) - 60

R

DS(on)

() at V

GS

= - 10 V 0.150

R

DS(on)

() at V

GS

= - 4.5 V 0.200

I

D

(A) - 2.5

P-Channel MOSFET

S

D

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

SQ2361EES

Marking Code: 8Nxxx

ORDERING INFORMATION

Package SOT-23

Lead (Pb)-free and Halogen-free SQ2361EES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

- 60

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

I

D

- 2.5

A

T

C

= 125 °C - 1.4

Continuous Source Current (Diode Conduction) I

S

- 2.5

Pulsed Drain Current

a

I

DM

- 10

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

- 15

Single Pulse Avalanche Energy E

AS

11 mJ

Maximum Power Dissipation

a

T

C

= 25 °C

P

D

2

W

T

C

= 125 °C 0.67

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

b

R

thJA

175

°C/W

Junction-to-Foot (Drain) R

thJF

75

SQ2361EES

www.vishay.com

Vishay Siliconix

S12-2198-Rev. C, 24-Sep-12

2

Document Number: 70953

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= - 250 μA - 60 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 μA - 1.5 - - 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 30 mA

V

DS

= 0 V, V

GS

= ± 8 V - - ± 2

μA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= - 60 V - - - 1

V

GS

= 0 V V

DS

= - 60 V, T

J

= 125 °C - - - 50

V

GS

= 0 V V

DS

= - 60 V, T

J

= 175 °C - - - 150

On-State Drain Current

a

I

D(on)

V

GS

= - 10 V V

DS

 - 5 V - 10 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V I

D

= - 2.4 A - 0.115 0.150



V

GS

= - 10 V I

D

= - 2.4 A , T

J

= 125 °C - - 0.260

V

GS

= - 10 V I

D

= - 2.4 A, T

J

= 175 °C - - 0.310

V

GS

= - 4.5 V I

D

= - 1.8 A - 0.160 0.200

Forward Transconductance

b

g

fs

V

DS

= - 10 V, I

D

= - 2 A - 5 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= - 30 V, f = 1 MHz

- 435 545

pF Output Capacitance C

oss

-5570

Reverse Transfer Capacitance C

rss

-4050

Total Gate Charge

c

Q

g

V

GS

= - 10 V V

DS

= - 30 V, I

D

= - 6 A

- 11.2 17

nC Gate-Source Charge

c

Q

gs

-1.6-

Gate-Drain Charge

c

Q

gd

-3.2-

Gate Resistance R

g

f = 1 MHz 2.7 5.4 8.1 

Turn-On Delay Time

c

t

d(on)

V

DD

= - 30 V, R

L

= 20 

I

D

 - 1.5 A, V

GEN

= - 10 V, R

g

= 1 

-711

ns

Rise Time

c

t

r

-812

Turn-Off Delay Time

c

t

d(off)

-1929

Fall Time

c

t

f

-812

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--- 10A

Forward Voltage V

SD

I

F

= - 1.5 A, V

GS

= 0 V - - 0.8 - 1.2 V

SQ2361EES

www.vishay.com

Vishay Siliconix

S12-2198-Rev. C, 24-Sep-12

3

Document Number: 70953

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

Transconductance

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

On-Resistance vs. Drain Current

V

GS

- Gate-to-Source Voltage (V)

- Gate Current (A)I

GSS

0

0.001

0.002

0.003

0.004

0.005

0 5 10 15 20 25

T

J

= 25 °C

0

01234

5

2

4

6

8

10

12

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

V

GS

= 10 V thru 6 V

V

GS

= 5 V

V

GS

= 4 V

V

GS

= 3 V

0

2

4

6

8

10

0123456

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

T

C

= 125 °C

T

C

= 25 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Gate Current (A)I

GSS

10

-10

10

-8

10

-6

10

-4

10

-2

10

-0

0 7 14 21 28 35

T

J

= 150 °C

T

J

= 25 °C

10

-9

10

-7

10

-5

10

-3

10

-1

0

2

4

6

8

10

0246810

T

C

= - 55 °C

T

C

= 125 °C

T

C

= 25 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0.0

0.1

0.2

0.3

0.4

0.5

0246810

V

GS

=10V

V

GS

=4.5V

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

MTP3055V

MTP3055V

Products related to this Datasheet