APT30DF60HJ

APT30DF60HJ
APT30DF60HJ – Rev 1 October 2012
www.microsemi.com
1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
C
= 25°C 60
I
F(AV)
Maximum Average Forward
Current
Duty cycle = 50%
T
C
= 80°C 30
I
FSM
Non-Repetitive Forward Surge Current 8.3ms
T
J
= 45°C
320
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
V
RRM
= 600V
I
F
= 30A @ Tc = 80°C
Application
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP
®
Package (SOT-227)
Benefits
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
ISOTOP
®
Fast Diode
Full Bridge Power Module
~
~
-
+
APT30DF60HJ
APT30DF60HJ – Rev 1 October 2012
www.microsemi.com
2-5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
F
= 30A 1.8 2.2
I
F
= 60A 2.2
V
F
Diode Forward Voltage
I
F
= 30A T
j
= 125°C 1.5
V
T
j
= 25°C 250
I
RM
Maximum Reverse Leakage Current V
R
= 600V
T
j
= 125°C 500
µA
C
T
Junction Capacitance V
R
= 200V 36 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 25
t
rr
Reverse Recovery Time
T
j
= 125°C 160
ns
T
j
= 25°C 35
Q
rr
Reverse Recovery Charge
T
j
= 125°C 480
nC
T
j
= 25°C 3
I
RRM
Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt = 200A/µs
T
j
= 125°C 6
A
t
rr
Reverse Recovery Time 85 ns
Q
rr
Reverse Recovery Charge 920
nC
I
RRM
Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt=1000A/µs
T
j
= 125°C
20
A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 1.2
R
thJA
Junction to Ambient 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 175
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2
g
APT30DF60HJ
APT30DF60HJ – Rev 1 October 2012
www.microsemi.com
3-5
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage
I
RRM
vs. Current Rate of Charge
15 A
30 A
60 A
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=400V
Trr vs. Current Rate of Charge
15 A
30 A
60 A
50
75
100
125
150
175
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=400V
Q
RR
vs. Current Rate Charge
15 A
30 A
60 A
0.0
0.5
1.0
1.5
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=400V
Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
200
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)

APT30DF60HJ

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bridge Rectifiers Power Module - Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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