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STPS5H100AF

P1-P3P4-P6P7-P8
January 2017
DocID029499 Rev 1
1/8
This is information on a product in full production.
www.st.com
STPS5H100AF
High voltage power Schottky rectifier
Datasheet - production data
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade-off between leakage current and
forward voltage drop
Avalanche specification
ECOPACK
®
compliant component
Description
This high voltage Schottky barrier rectifier device
is packaged in SOD128Flat and designed for
high frequency miniature switched mode power
supplies and for board DC to DC converters.
Table 1: Device summary
Symbol
I
F(AV)
5 A
V
RRM
100 V
T
j
(max.)
175 °C
V
F
(typ.)
0.51 V
SOD128Flat
A
K
Characteristics
STPS5H100AF
2/8
DocID029499 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(AV)
Average forward current
T
L
= 115 °C, δ = 0.5, square pulse
5
A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal
125
A
t
p
= 8.3 ms sinusoidal
130
P
ARM
Repetitive peak avalanche
power
t
p
= 10 µs, T
j
= 125 °C
165
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
(1)
175
°C
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-l)
Junction to lead
16
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= 100 V
-
0.7
3.5
µA
T
j
= 125 °C
-
1
4
mA
T
j
= 150 °C
-
16
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2.5 A
-
0.67
V
T
j
= 125 °C
-
0.51
0.55
T
j
= 25 °C
I
F
= 5 A
-
0.76
T
j
= 125 °C
-
0.57
0.61
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.49 x I
F(AV)
+ 0.024 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power
losses.
AN604 (Calculation of conduction losses in a power rectifier)
AN4021 (Calculation of reverse losses in a power diode)
STPS5H100AF
Characteristics
DocID029499 Rev 1
3/8
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Normalized avalanche power derating
versus pulse duration
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
0
1
2
3
4
0 1 2 3 4 5 6
δ = 0.05
δ = 0.1
δ = 0.2 δ = 0.5
δ = 1
T
δ
= tp/T
tp
P
F(AV)
(W)
I
F(AV)
(A)
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
I
F(AV)
(A)
T
amb
(°C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
Z
th(j-l)
/R
th(j-l)
t
p
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 10 20 30 40 50 60 70 80 90 100
T
j
= 125 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 50 °C
T
j
= 75 °C
T
j
= 150 °C
V
R
(V)
I
R
(µA)
10
100
1000
1 10 100
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
V
R
(V)
C(pF)
P1-P3P4-P6P7-P8

STPS5H100AF

Mfr. #:
Buy STPS5H100AF
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers High voltage power Schottky rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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