Electrical characteristics ST1S09
6/18 Doc ID 13632 Rev 4
4 Electrical characteristics
Refer to Figure 21 application circuit V
IN_SW
= V
IN_A
= 5 V, V
O
= 1.2 V, C1 = 4.7 µF,
C
2
= 22 µF, L1 = 2.7 µH, T
J
= -30 to 125 °C (unless otherwise specified. Typical values are
referred to 25 °C)
Table 6. Electrical characteristics for ST1S09PU
Symbol Parameter Test conditions Min. Typ. Max. Unit
FB Feedback voltage 784 800 816 mV
I
FB
V
FB
pin bias current 600 nA
V
I
Input voltage I
O
= 10 mA to 2 A 4.5 5.5 V
UV
LO
Under voltage lock out
threshold
V
I
Rising 3.5 3.7 3.9 V
Hysteresis 150 mV
OVP
Over voltage protection
threshold
V
O
rising 1.05 V
O
1.1 V
O
V
Over voltage protection
hysteresis
V
O
falling 5 %
I
OVP
Overvoltage clamping current V
O
= 1.2 V 300 mA
I
Q
Quiescent current Not switching 1.5 2.5 mA
I
O
Output current V
I
= 4.5 to 5.5 V
(1)
2A
%V
O
/ΔV
I
Output line regulation V
I
= 4.5 V to 5.5 V, I
O
= 100 mA
(1)
0.16
%V
O
/
ΔV
I
%V
O
/ΔI
O
Output load regulation I
O
= 10 mA to 2 A
(1)
0.2 0.6 %
PWMf
S
PWM switching frequency V
FB
= 0.65 V 1.2 1.5 1.8 MHz
D
MAX
Maximum duty cycle 80 87 %
PG
Power good output threshold 0.92 V
O
V
Power good output voltage low I
SINK
= 6 mA open drain output 0.4 V
R
DSON
-N NMOS switch on resistance I
SW
= 750 mA 0.1 Ω
R
DSON
-P PMOS switch on resistance I
SW
= 750 mA 0.1 Ω
I
SWL
Switching current limitation
(1)
2.5 2.9 3.5 A
ν
Efficiency
(1)
I
O
= 10 mA to 100 mA, V
O
= 3.3 V 65
%
I
O
= 100 mA to 2 A, V
O
= 3.3 V 82 87
T
SHDN
Thermal shutdown 150 °C
T
HYS
Thermal shutdown hysteresis 20 °C
%V
O
/ΔI
O
Load transient response
I
O
= 100 mA to 1 A, T
A
= 25 °C
t
R
= t
F
≥ 200 ns
(1)
-10 +10 %V
O
%V
O
/ΔI
O
Short circuit removal response
I
O
= 10 mA to I
O
= short,
T
A
= 25 °C
(1)
-10 +10 %V
O
1. Guaranteed by design, but not tested in production.
