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2N5551RLRMG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1 Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage
2N5550
2N5551
V
CEO
140
160
Vdc
Collector − Base Voltage
2N5550
2N5551
V
CBO
160
180
Vdc
Emitter − Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 1
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N
555x
AYWW G
G
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
2N5550, 2N5551
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0) 2N5550
2N5551
V
(BR)CEO
140
160
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0 ) 2N5550
2N5551
V
(BR)CBO
160
180
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0) 2N5550
(V
CB
= 120 Vdc, I
E
= 0) 2N5551
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C) 2N5550
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C) 2N5551
I
CBO
−
−
−
−
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc) 2N5550
2N5551
h
FE
60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) 2N5550
2N5551
V
CE(sat)
−
−
−
0.15
0.25
0.20
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc) 2N5550
2N5551
V
BE(sat)
−
−
−
1.0
1.2
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100 300 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 6.0 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) 2N5550
2N5551
C
ibo
−
−
30
20
pF
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50 200 −
Noise Figure
(I
C
= 250 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz) 2N5550
2N5551
NF
−
−
10
8.0
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5550, 2N5551
http://onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
T
J
= 125°C
−55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
V
CE
= 1.0 V
V
CE
= 5.0 V
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.0
I
C
= 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0
2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1
10 mA
30 mA
100 mA
5.0
Figure 3. Collector Cut−Off Region
I
C
, COLLECTOR CURRENT (mA)
1.0
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
0.1 0.2 0.5
Figure 4. “On” Voltages
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
10
1
10
−5
0.4 0.3 0.1
0.8
0.6
0.4
0.2
0
10
0
10
−1
10
−2
10
−3
10
−4
0.2 0 0.1 0.2 0.40.3 0.60.5
V
CE
= 30 V
T
J
= 125°C
75°C
25°C
I
C
= I
CES
, COLLECTOR CURRENT (A)μI
C
3.0 30
REVERSE FORWARD
0.3
P1-P3P4-P6

2N5551RLRMG

Mfr. #:
Buy 2N5551RLRMG
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 160V 0.6A TO-92
Lifecycle:
New from this manufacturer.
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