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VQ2001P

P1-P3P4-P5
VP0300L/LS, VQ2001J/P
Vishay Siliconix
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
V
GS(th)
(V) I
D
(A)
VP0300L 2.5 @ V
GS
= –12 V –2 to –4.5 –0.32
VP0300LS 2.5 @ V
GS
= –12 V –2 to –4.5 –0.5
VQ2001J
–30
2 @ V
GS
= –12 V –2 to –4.5 –0.6
VQ2001P 2 @ V
GS
= –12 V –2 to –4.5 –0.6
FEATURES BENEFITS APPLICATIONS
D High-Side Switching
D Low On-Resistance: 1.5 W
D Moderate Threshold: –3.1 V
D Fast Switching Speed: 17 ns
D Low Input Capacitance: 60 pF
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
TO-92S
(Copper Lead Frame)
Top View
S
D
G
1
2
3
Plastic: VQ2001J
Sidebraze: VQ2001P
VP0300L VP0300LS
S
3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC NC
G
2
G
3
S
2
D
2
D
3
P
P
P
P
For device marking, see the last page of this data sheet.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
VQ2001J/P
Parameter Symbol VP0300L VP0300LS
Single Total Quad
Unit
Drain-Source Voltage V
DS
–30 –30 –30 –30
Gate-Source Voltage V
GS
"20 "20 "20 "20
V
Continuous Drain Current
T
A
= 25_C
–0.32 –0.5 –0.6 –0.6
Continuous Drain Current
(T
J
= 150_C)
T
A
= 100_C
I
D
–0.2 –0.32 –0.37 –0.37
A
Pulsed Drain Current
a
I
DM
–2.4 –3 –2 –2
T
A
= 25_C
0.8 0.9 1.3 2
Power Dissipation
T
A
= 100_C
P
D
0.32 0.4 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient R
thJA
156 139 96 62.5
_C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
VP0300L/LS, VQ2001J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VP0300L/LS VQ2001J/P
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= –10 mA
–55 –30 –30
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA –3.1 –2 –4.5 –2 –4.5
V
V
DS
= 0 V, V
GS
= "16 V
"100
Gate-Body Leakage I
GSS
T
J
= 125_C "500
nA
V
DS
= 0 V, V
GS
= "20 V
"100
V
DS
= –24 V, V
GS
= 0 V –10
Zero Gate Voltage Drain Current I
DSS
T
J
= 125_C
–500 –500
mA
V
DS
= –30 V, V
GS
= 0 V –10
On-State Drain Current
b
I
D(on)
V
DS
= –10 V, V
GS
= –12 V
–2.8 –1.5 –1.5 A
b
V
GS
= –12 V, I
D
= –1 A
1.5 2.5 2
W
Drain-Source On-Resistance
b
r
DS(on)
T
J
= 125_C
2.6 3.6 3.6
W
Forward Transconductance
b
g
fs
V
DS
= –10 V, I
D
= –0.5 A
370
200 200
Common Source Output Conductance
b
g
os
V
DS
= –7.5 V, I
D
= –0.05 A
0.25
mS
Dynamic
Input Capacitance C
iss
60
150 150
Output Capacitance C
oss
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
40
100 100
pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
10
60 60
Switching
c
Turn-On Time t
ON
V
DD
= –25 V, R
L
= 23 W
^
19 30
Turn-Off Time t
OFF
I
D
^ –1 A, V
GEN
= –10 V
R
G
= 25 W
17 30
Turn-On Time t
ON
V
DD
=–15 V, R
L
= 23 W
^
19 30
ns
Turn-Off Time t
OFF
I
D
^ –0.6 A, V
GEN
= –10 V
R
G
= 25 W
16 30
Notes
a. For DESIGN AID ONLY, not subject to production testing. VPEA03
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VP0300L/LS, VQ2001J/P
Vishay Siliconix
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
–2.0
–1.6
–1.2
–0.8
–0.4
0
0 –1 –2 –3 –4 –5
Output Characteristics Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
V
GS
= –10 V
–5 V
–8 V
–7 V
–6 V
V
GS
– Gate-to-Source Voltage (V)
–1000
–800
–600
–400
–200
0
0 –2 –4 –6 –8 –10
T
J
= –55_C
25_C
125_C
–4 V
–9 V
Source-Drain Diode Forward Voltage
–1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0
–10 K
–1 K
–1
–100
–10
V
SD
– Source-to-Drain Voltage (V)
0.75
0.90
1.05
1.20
1.35
1.50
1.65
–50 –25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
V
GS
= –4.5 V
I
D
= –0.5 A
T
J
– Junction Temperature (_C)
V
GS
= –10 V
I
D
= –0.1 A
0 1000 2000 3000 4000 5000
Gate Charge
Q
g
– Total Gate Charge (pC)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
175
150
125
100
75
50
25
0
0 –5 –10 –15 –20 –25 –30
C
rss
C
oss
C
iss
V
DS
= –15 V
I
D
= –1 A
V
DS
= –24 V
I
D
= –1 A
–18
–15
–12
–9
–6
–3
0
V
GS
= 0 V
f = 1 MHz
–0.50
T
J
= 25_C
T
J
= 150_C
I
D
– Drain Current (A)
I
D
– Drain Current (mA)
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance ( Ω )
(Normalized)
I
S
– Source Current (A)
P1-P3P4-P5

VQ2001P

Mfr. #:
Buy VQ2001P
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Quad 30V 0.6A
Lifecycle:
New from this manufacturer.
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