OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN33D8LDW-13

P1-P3P4-P6
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN33D8LDW
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
30V
3 @ V
GS
= 4.5V 250 mA
5 @ V
GS
= 4.0V 200 mA
7 @ V
GS
= 2.5V 100 mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Motor Control
• Power Management Functions
• DC-DC Converters
• Backlighting
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate to 2kV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN33D8LDW-7 SOT363 3K/Tape & Reel
DMN33D8LDW-13 SOT363 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N33 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
ESD PROTECTED
Top View
S
2
D
2
D
1
S
1
G
2
G
1
Q
1
Q
2
Top View
Internal Schematic
e3
SOT363
Chengdu A/T Site
Shanghai A/T Site
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN33D8LDW
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle=1%)
I
DM
0.8 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.35
W
T
A
= +70°C
0.22
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
360
°C/W
Thermal Resistance, Junction to Case
R
JC
126
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 1 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 A
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.8 — 1.5 V
V
DS
= 3V, I
D
= 100A
Static Drain-Source On-Resistance
R
DS(ON)
— — 2.4
V
GS
= 10V, I
D
= 250mA
— — 3.0
V
GS
= 4.5V, I
D
= 250mA
— — 5.0
V
GS
= 4.0V, I
D
= 10mA
— — 7.0
V
GS
= 2.5V, I
D
= 5mA
— — 20
V
GS
= 1.8V, I
D
= 5mA
Forward Transfer Admittance
|Y
fs
|
10 — - mS
V
DS
= 3V, I
D
= 10mA
Diode Forward Voltage
V
SD
— — 1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
48
— pF
V
DS
= 5V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
11
— pF
Reverse Transfer Capacitance
C
rss
—
8
— pF
Gate Resistance
R
g
— 57 — f=1MHz , Vgs=0V, Vds=0V
Total Gate Charge (V
GS
= 4.5V) Q
g
— 0.55 — nC
V
GS
= 10V, V
DS
= 10V,
I
D
= 250mA
Total Gate Charge (V
GS
= 10V) Q
g
— 1.23 — nC
Gate-Source Charge
Q
g
s
— 0.14 — nC
Gate-Drain Charge
Q
g
d
— 0.14 — nC
Turn-On Delay Time
t
D
(
on
)
— 2.9 — ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25, I
D
= 200mA
Turn-On Rise Time
t
r
— 2.6 — ns
Turn-Off Delay Time
t
D
(
off
)
— 18.2 — ns
Turn-Off Fall Time
t
f
— 13.6 — ns
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN33D8LDW
Document number: DS36754 Rev. 3 - 2
3 of 6
www.diodes.com
August 2014
© Diodes Incorporated
DMN33D8LDW
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V= 2.0V
GS
V= 3.5V
GS
V= 4.5V
GS
V= 10V
GS
V= 1.8V
GS
V= 2.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
0.2
0.4
0.6
0.8
1
01234
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V = 2.5V
GS
V = 4.0V
GS
V= 10V
GS
V= 4.5V
GS
0.1
1
10
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0 0.2 0.4 0.6 0.8 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
V = 4.5V
I = 250mA
GS
D
V=V
I= 500mA
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
V = 4.5V
I = 250mA
GS
D
V=V
I = 500mA
GS
D
10
P1-P3P4-P6

DMN33D8LDW-13

Mfr. #:
Buy DMN33D8LDW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet