1N5393G R0G

CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
Cj pF
R
θjA
O
C/W
T
J
O
C
T
STG
O
C
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405013 Version: E14
PARAMETER SYMBOL
1N
5391G
1N
5392G
1N
5393G
1N5391G thru 1N5399G
Glass Passivated Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
1N
5395G
1N
5397G
1N
5398G
1N
5399G
UNIT
MECHANICAL DATA
Case: DO-204AC (DO-15)
DO-204AC (DO-15)
Weight: 0.4g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50
Taiwan Semiconductor
Typical junction capacitance (Note 2) 15
Typical thermal resistance 65
Maximum reverse current @ rated VR T
J
=25
T
J
=125
I
R
μA
A
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Note 1: Pulse test with PW=300 μs, 1% duty cycle
1.1 1.0
5
100
- 55 to +150Operating junction temperature range
Storage temperature range - 55 to +150
V
F
CREAT BY ART
PART NO.
PART NO.
1N5391G
1N5391G
1N5391G
(TA=25 unless otherwise noted)
Document Number: DS_D1405013 Version: E14
1N5391G thru 1N5399G
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING CODE GREEN COMPOUND
CODE
PACKAGE PACKING
Prefix "H"
A0
Suffix "G"
DO-15 1,500 / Ammo box
R0 DO-15 3,500 / 13" Paper reel
B0 DO-15 1,000 / Bulk packing
Note 1: "x" defines voltage from 50V (1N5391G) to 1000V (1N5399G)
EXAMPLE
PREFERRED P/N
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
1N539xG
(Note 1)
1N5391G A0 A0
1N5391G A0G A0 G Green compound
1N5391GHA0 H A0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
0.5
1
1.5
2
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT(A)
LEAD TEMPERATURE(
o
C)
FIG.1 MAXMUM FORWARD CURRENT
DERATING CURVE
0
20
40
60
80
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Wave
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25
TJ=75
TJ=125
0.01
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
Fig. 4 TYPICAL FORWARD CHARACTERISTICS
1N5393G-
1N5399G
1N5391G-
1N5392G
CREAT BY ART
Min Max Min Max
A 2.60 3.60 0.102 0.142
B 0.70 0.90 0.028 0.035
C 25.40 - 1.000 -
D 5.80 7.60 0.228 0.299
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1405013 Version: E14
MARKING DIAGRAM
1N5391G thru 1N5399G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
1
10
100
1000
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vslg=50mVp-p

1N5393G R0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Rectifiers 1.5A, 200V, GLASS PASSIVATED RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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