SFH615A-3X018

SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Feb-13
1
Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, High Reliability, 5300 V
RMS
DESCRIPTION
The SFH615A-3X018T features a variety of transfer ratios,
low coupling capacitance and high isolation voltage. This
coupler has a GaAs infrared diode emitter, which is optically
coupled to a silicon planar phototransistor detector, and is
incorporated in a plastic SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
FEATURES
Excellent CTR linearity depending on forward
current
Isolation test voltage, 5300 V
RMS
Fast switching times
Low CTR degradation
Low coupling capacitance
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Switchmode power supply
•Telecom
Battery powered equipment
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-5 (VDE 0884-5) available with option 1
cUL tested to CSA 22.2 bulletin 5A
BSI IEC 60950, IEC 60065
FIMKO EN6005, EN60950-1
E
CA
C
1
2
4
3
17448-5
1
ORDERING INFORMATION
SFH615A- 3X018T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA
VDE, UL, cUL, BSI, FIMKO 100 to 200
SMD-4, option 8 SFH615A-3X018T
9.27 mm
SMD-4
SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Feb-13
2
Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
DC forward current I
F
60 mA
Surge forward current t
p
10 μs I
FSM
2.5 A
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
p
1 ms I
C
100 mA
COUPLER
Isolation test voltage
between emitter and detector
t = 1 s V
ISO
5300 V
RMS
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness between emitter and detector 0.4 mm
Comparative tracking index per
DIN IEC112/VDE0303 part 1
CTI 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to +100 °C
Soldering temperature
(1)
max. 10 s T
sld
260 °C
0
50
100
150
200
0 255075100125150
18483
P
tot
- Power Dissipation (mW)
Phototransistor
Diode
T
amb
- Ambient Temperature (°C)
SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Feb-13
3
Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal
characteristics of optocouplers application note.
(1)
For 2 layer FR4 board (4" x 3" x 0.062")
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
LED power dissipation P
diss
100 mW
Output power dissipation P
diss
150 mW
Maximum LED junction temperature T
jmax.
125 °C
Maximum output die junction temperature T
jmax.
125 °C
Thermal resistance, junction emitter to board
EB
173 °C/W
Thermal resistance, junction emitter to case
EC
149 °C/W
Thermal resistance, junction detector to board
DB
111 °C/W
Thermal resistance, junction detector to case
DC
127 °C/W
Thermal resistance, junction emitter to
junction detector
ED
95 °C/W
Thermal resistance, board to ambient
(1)
BA
195 °C/W
Thermal resistance, case to ambient
(1)
CA
3573 °C/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
13 pF
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
5.2 pF
Collector emitter leakage current V
CE
= 10 V I
CEO
5 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.4 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 10 mA, V
CE
= 5 V CTR 100 200 %
I
F
= 1 mA, V
CE
= 5 V CTR 34 70 %
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package

SFH615A-3X018

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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