DN0150BDJ-7 Datasheet DN0150BDJ-7, DN0150ADJ-7 | P1-P3

DN0150ADJ / DN0150BDJ

Document number: DS31484 Rev. 3 - 2

1 of 4

www.diodes.com

April 2009

DN0150ADJ / DN0150BDJ

NEW PRODUCT

DUAL NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Ultra Small Package

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.0027 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

60 V

Collector-Emitter Voltage

V

CEO

50 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current – Continuous

I

C

100 mA

Base Current

I

B

30 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

P

D

300 mW

Thermal Resistance, Junction to Ambient (Note 3)

R

θ

JA

417 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(

BR

)

CBO

60 — — V

I

C

= 10μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V(

BR

)

CEO

50 — — V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V(

BR

)

EBO

5 — — V

I

E

= 10μA, I

C

= 0

Collector Cut-Off Current

I

CBO

— — 0.1

μA

V

CB

= 60V, I

E

= 0

Emitter Cut-Off Current

I

EBO

— — 0.1

μA

V

EB

= 5V, I

C

= 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

— 0.10 0.25 V

I

C

= 100mA, I

B

= 10mA

DC Current Gain DN0150ADJ

DN0150BDJ

h

FE

120 — 240

—

V

CE

= 6V, I

C

= 2mA

200 — 400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

60 — — MHz

V

CE

= 10V, I

E

= -1mA

f = 30MHz

Output Capactiance

C

ob

— 1.3 — pF

V

CB

= 10V, I

E

= 0,

f = 1MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%

Device SchematicTop View

SOT-963

6

Q1

Q2

5

4

31

2

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DN0150ADJ / DN0150BDJ

Document number: DS31484 Rev. 3 - 2

2 of 4

www.diodes.com

April 2009

DN0150ADJ / DN0150BDJ

NEW PRODUCT

0

P , POWER DISSIPATION (W)

D

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

50

100

150

200

250

25 50 75 100 125 150

300

R = 417°C/W

θ

JA

1

10

100

1,000

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

-I ,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(mA)

C

Pw = 100ms

Pw = 10ms

DC

0.1 10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain

vs. Collector Current (DN0150BDJ)

1

10

100

1,000

h, D

C

U

R

E

N

T

G

AI

N

FE

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 6V

CE

0.01

0.1

1

0.0001 0.001 0.01 0.1 1

I , COLLECTOR CURRENT (A)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 10

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

I , COLLECTOR CURRENT (A)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

0.0001 0.001 0.01 0.1 1

0.2

0.4

0.6

0.8

1.0

1.2

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 10

CB

/I

I , COLLECTOR CURRENT (A)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

0.0001 0.001 0.01 0.1 1

0.2

0.4

0.6

0.8

1.0

1.2

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 6V

CE

DN0150ADJ / DN0150BDJ

Document number: DS31484 Rev. 3 - 2

3 of 4

www.diodes.com

April 2009

DN0150ADJ / DN0150BDJ

NEW PRODUCT

0

1

10

100

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

C

A

P

A

C

I

T

AN

C

E (pF)

C

ibo

C

obo

f = 1MHz

0

40

80

120

160

200

240

280

320

02 46810

I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

V = 6V

f = 30MHz

CE

Ordering Information (Note 5)

Device Packaging Shipping

DN0150ADJ-7 SOT-963 10,000/Tape & Reel

DN0150BDJ-7 SOT-963 10,000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

SOT-963

Dim Min Max Typ

A 0.40 0.50 0.45

A1 0 0.05 -

c 0.077 0.177 0.127

D 0.95 1.05 1.00

E 0.95 1.05 1.00

E1 0.75 0.85 0.80

L 0.05 0.15 0.10

b 0.10 0.20 0.15

e 0.35 Typ

e1 0.70 Typ

All Dimensions in mm

xx= Product Type Marking Code:

T3 = DN0150ADJ

T4 = DN0150BDJ

L

c

E

D

e1

e

E1

b (5 places)

A

A1

xx

DN0150BDJ-7

DN0150BDJ-7

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