PD54008

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18

1/18March, 21 2003

PD54008

PD54008S

RF POWER TRANSISTORS

The LdmoST

FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

OUT

= 8 W with 11.5 dB gain @ 500 MHz /

7.5 V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD54008 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 7 V in common source mode at frequencies of

up to 1 GHz. PD54008 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. PD54008’s

superior linearity performance makes it an ideal

solution for portable radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD54008

BRANDING

PD54008

PowerSO-10RF

(straight lead)

ORDER CODE

PD54008S

BRANDING

PD54008S

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25

°

C)

Symbol Parameter Value Unit

V

(BR)DSS

Drain-Source Voltage 25 V

V

GS

Gate-Source Voltage ± 20 V

I

D

Drain Current 5 A

P

DISS

Power Dissipation (@ Tc = 70°C) 73 W

Tj Max. Operating Junction Temperature 165 °C

T

STG

Storage Temperature -65 to +150 °C

THERMAL DATA

R

th(j-c)

Junction -Case Thermal Resistance 1.2 °C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

PD54008 - PD54008S

2/18

ELECTRICAL SPECIFICATION (T

CASE

= 25

°

C)

STATIC

DYNAMIC

IMPEDANCE DATA

Symbol Test Conditions Min. Typ. Max. Unit

I

DSS

V

GS

= 0 V V

DS

= 25 V

1 µA

I

GSS

V

GS

= 20 V V

DS

= 0 V

1 µA

V

GS(Q)

V

DS

= 10 V

I

D

= 150 mA

2.0 5.0 V

V

DS(ON)

V

GS

= 10 V I

D

= 2 A

0.6 V

g

FS

V

DS

= 10 V I

D

= 2 A

2.0 2.5 mho

C

ISS

V

GS

= 0 V V

DS

= 7.5 V f = 1 MHz

91 pF

C

OSS

V

GS

= 0 V V

DS

= 7.5 V f = 1 MHz

68 pF

C

RSS

V

GS

= 0 V V

DS

= 7.5 V f = 1 MHz

8.5 pF

Symbol Test Conditions Min. Typ. Max. Unit

P

1dB

V

DD

= 7.5 V I

DQ

= 150 mA f = 500 MHz

8W

G

P

V

DD

= 7.5 V I

DQ

= 150 mA P

OUT

= 8 W f = 500 MHz

10 11.5 dB

η

D

V

DD

= 7.5 V I

DQ

= 150 mA P

OUT

= 8 W f = 500 MHz

50 55 %

Load

mismatch

V

DD

= 9.5 V I

DQ

= 150 mA P

OUT

= 8 W f = 500 MHz

ALL PHASE ANGLES

20:1 VSWR

PIN CONNECTION

GATE

SOURCE

DRAIN

SC15200

Typical Input

Impedance

Typical Drain

Load Impedance

G

D

S

Z

DL

Zin

SC13140

PD54008S

FREQ. (MHz)

Z

IN

(Ω) Z

DL

(Ω)

480 1.22 - j 0.91 1.04 - j 0.65

500 1.20 - j 0.48 1.28 - j 0.55

520 1.28 - j 0.74 1.44 - j 0.99

PD54008

FREQ. (MHz)

Z

IN

(Ω) Z

DL

(Ω)

175 2.3 - j 4.8 1.9 + j 1.9

200 2.1 - j 4.0 2.8 + j 1.1

250 1.3 - j 3.8 2.3 + j 0.0

480 1.65 + j 0.53 1.35 - j 1.57

500 1.73 + j 0.96 1.48 - j 1.62

520 1.73 + j 1.15 1.47 - j 1.97

Obsolete Product(s) - Obsolete Product(s)

3/18

PD54008 - PD54008S

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage Drain Current vs. Gate-Source Voltage

Gate-Source Voltage vs Case Temperature

0 5 10 15

VDS (V)

1

10

100

1000

C (pF)

f = 1 MHz

Ciss

Coss

Crss

2.5 3 3.5 4 4.5 5

VGS (V)

0

0.5

1

1.5

2

2.5

3

3.5

4

Id (A)

VDS = 10 V

-25 0 25 50 75

Tc (°C)

0.96

0.98

1

1.02

1.04

VGS (NORMALIZED)

VDS = 10 V

ID = 1.5 A

ID = 2 A

ID = 3 A

ID = 0.25 A

ID = 1 A

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18

PD54008

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

FET RF 25V 500MHZ PWRSO-10

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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PD54008