BA479S-TAP

BA479G, BA479S
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
1
Document Number: 85527
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RF PIN Diodes - Single in DO-35
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Wide frequency range 10 MHz to 1 GHz
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Current controlled HF resistance in adjustable
attenuators
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA479G V
R
= 30 V, z
r
> 5 k BA479G-TR or BA479G-TAP BA479G Single diode Tape and reel/ammopack
BA479S V
R
= 30 V, z
r
> 9 k BA479S-TR or BA479S-TAP BA479S Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
30 V
Forward continuous current I
F
50 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
350 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 20 mA V
F
1V
Reverse current V
R
= 30 V I
R
0.05 μA
Diode capacitance f = 100 MHz, V
R
= 0 V C
D
0.5 pF
Differential forward resistance f = 100 MHz, I
F
= 1.5 mA r
f
50
Reverse impedance f = 100 MHz, V
R
= 0 V
BA479G z
r
5k
BA479S z
r
9k
Minority carrier lifetime I
F
= 10 mA, I
R
= 10 mA s
BA479G, BA479S
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
2
Document Number: 85527
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Differential Forward Resistance vs. Forward Current
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f
2
PACKAGE DIMENSIONS in millimeters (inches): DO-35
0 0.4 0.8 1.2 1.6
0.01
0.1
1
10
100
2.0
95 9735
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
T
amb
= 25 °C
Scattering Limit
0.001 0.01 0.1 1
1
10
100
1000
10 000
10
95 9734
I
F
- Forward Current (mA)
f > 20 MHz
T
j
= 25 °C
r
f
- Differential Forward Resistance (Ω)
- 80
- 60
- 40
- 20
0
20
a - Typical Cross Modulation Distortion (dB)
f
2
, modulated with 200 kHz, m = 100 % (MHz)
806040200
95 9733
- Circuit with 10 dB Attenuation
V
0
=40dBmV
f
1
= 100 MHz unmodulated
Π
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 08-Feb-17
1
Document Number: 91000
Disclaimer
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BA479S-TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
PIN Diodes 30 Volt 9kohm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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