AS7C4096A-15TINTR

®
AS7C4096A
2/21/06, v 1.2 Alliance Semiconductor P. 4 of 10
Key to switching waveforms
Read waveform 1 (address controlled)
2,5,6,8
Read waveform 2 (CE
, OE controlled)
2,5,7,8
Read cycle (over the operating range)
2,8
Parameter Symbol
–10 –12 –15 –20
Unit NotesMin Max Min Max Min Max Min Max
Read cycle time
t
RC
10–12–15–20–ns
Address access time
t
AA
–10–12–15–20ns2
Chip enable (CE
) access time
t
ACE
–10–12–15–20ns2
Output enable (OE
) access time
t
OE
–5–6–6–6ns
Output hold from address change
t
OH
3–3–3–3–ns4
CE
Low to output in low Z
t
CLZ
3–3–3–3–ns3,4
CE
High to output in high Z
t
CHZ
–5–6–7–9ns3,4
OE
Low to output in low Z
t
OLZ
0–0–0–0–ns3,4
OE
High to output in high Z
t
OHZ
–5–6–7–9ns3,4
Power up time
t
PU
0–0–0–0–ns3,4
Power down time
t
PD
–10–12–15–20ns3,4
Undefined/don’t careFalling inputRising input
Address
D
OUT
Data valid
t
OH
t
AA
t
RC
current
Supply
OE
D
OUT
t
OE
t
OLZ
t
ACE
t
CHZ
t
CLZ
t
PU
t
PD
I
CC
I
SB
50% 50%
t
OHZ
Data valid
t
RC1
CE
®
AS7C4096A
2/21/06, v 1.2 Alliance Semiconductor P. 5 of 10
Write waveform 1 (WE controlled)
9
Write cycle (over the operating range)
9
Parameter Symbol
–10 –12 –15 –20
Unit NotesMin Max Min Max Min Max Min Max
Write cycle time
t
WC
10–12–15–20–ns
Chip enable (CE
) to write end
t
CW
7–8–1012ns
Address setup to write end
t
AW
7–8–1012ns
Address setup time
t
AS
0–0–0–0–ns
Write pulse width (OE
= high)
t
WP1
7–8–1012ns
Write pulse width (OE
= low
t
WP2
10–12–15–20–ns
Address hold from end of write
t
AH
0–0–0–0–ns
Write recovery time
t
WR
0–0–0–0–ns
Data valid to write end
t
DW
5–6–7–9–ns
Data hold time
t
DH
0–0–0–0–ns3,4
Write enable to output in high Z
t
WZ
25262729ns3,4
Output active from write end
t
OW
3–3–3–3–ns3,4
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
t
WZ
t
WP
t
AS
Data valid
D
IN
t
WR
®
AS7C4096A
2/21/06, v 1.2 Alliance Semiconductor P. 6 of 10
Write waveform 2 (CE controlled)
9
AC test conditions
Notes
1During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
2 For test conditions, see AC Test Conditions.
3t
CLZ
and t
CHZ
are specified with C
L
= 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.
4 This parameter is guaranteed, but not tested.
5WE
is HIGH for read cycle.
6CE
and OE are LOW for read cycle.
7 Address valid prior to or coincident with CE
transition Low.
8 All read cycle timings are referenced from the last valid address to the first transitioning address.
9 All write cycle timings are referenced from the last valid address to the first transitioning address.
10 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
t
AW
Address
CE
WE
t
CW
t
DW
t
DH
t
AH
t
WC
t
AS
Data valid
D
IN
t
WR
t
WP
255
C
10
480
D
OUT
GND
+5.0V
Figure B: 5.0V Output load
- Output load: see Figure B.
- Input pulse level: GND to V
CC
- 0.5V. See Figures A and B.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
168
Thevenin equivalent:
D
OUT
+1.728V
10%
90%
10%
90%
GND
V
CC
- 0.5V
Figure A: Input pulse
2 ns

AS7C4096A-15TINTR

Mfr. #:
Manufacturer:
Alliance Memory
Description:
SRAM 4M, 3.3V, 15ns, FAST 512K x 8 Asynch SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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