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IRF830SPBF

P1-P3P4-P6P7-P8
IRF830S, SiHF830S, IRF830L, SiHF830L
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
1
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 24 mH, R
g
= 25 , I
AS
= 4.5 A (see fig. 12).
c. I
SD
4.5 A, dI/dt 75 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 1.5
Q
g
max. (nC) 38
Q
gs
(nC) 5.0
Q
gd
(nC) 22
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and halogen-free SiHF830S-GE3 SiHF830STRL-GE3
a
SiHF830L-GE3
Lead (Pb)-free IRF830SPbF IRF830STRLPbF
a
IRF830LPbF
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
4.5
AT
C
= 100 °C 2.9
Pulsed Drain Current
a
I
DM
18
Linear Derating Factor 0.59
W/°C
Linear Derating Factor (PCB mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
280 mJ
Avalanche Current
a
I
AR
4.5 A
Repetitive Avalanche Energy
a
E
AR
7.4 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
74
W
Maximum Power Dissipation (PCB mount)
e
T
A
= 25 °C 3.1
Peak Diode Recovery dV/dt
c
dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
IRF830S, SiHF830S, IRF830L, SiHF830L
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
2
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB mount)
a
R
thJA
-40
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.61 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 2.7 A
b
--1.5
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 2.7 A
b
2.5 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 610 -
pFOutput Capacitance C
oss
- 160 -
Reverse Transfer Capacitance C
rss
-68-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 3.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
--38
nC Gate-Source Charge Q
gs
--5.0
Gate-Drain Charge Q
gd
--22
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 3.1 A,
R
g
= 12 , R
D
= 79 , see fig. 10
b
-8.2-
ns
Rise Time t
r
-16-
Turn-Off Delay Time t
d(off)
-42-
Fall Time t
f
-16-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.5 - 2.7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--4.5
A
Pulsed Diode Forward Current
a
I
SM
--18
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 4.5 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 3.1 A, dI/dt = 100 A/μs
b
- 320 640 ns
Body Diode Reverse Recovery Charge Q
rr
-1.02.0μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRF830S, SiHF830S, IRF830L, SiHF830L
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
3
Document Number: 91064
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91064_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91064_02
4.5 V
20 µs Pulse Width
V
DS
= 50 V
10
1
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
567
8
910
4
25
°
C
150
°
C
91064_03
I
D
= 3.1 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91064_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1500
1250
1000
750
0
250
500
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91064_05
P1-P3P4-P6P7-P8

IRF830SPBF

Mfr. #:
Buy IRF830SPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 500V HEXFET MOSFET D2-PA
Lifecycle:
New from this manufacturer.
Delivery:
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