PS2703-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current
*1
IFP 1 A
Transistor Collector to Emitter Voltage VCEO 120 V
Emitter to Collector Voltage VECO 6 V
Collector Current IC 30 mA
Power Dissipation Derating
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage
*2
BV 3 750 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at T
A = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10242EJ02V0DS
4
PS2703-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 5 mA 1.1 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 30 pF
Transistor
Collector to Emitter Dark
Current
I
CEO IF = 0 mA, VCE = 120 V 100 nA
Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V 50 150 400 %
(IC/IF)
*1
IF = 1 mA, VCE = 5 V 10 80
Collector Saturation
Voltage
V
CE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1 kVDC 10
11
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time
*2
tr VCC = 5 V, IC = 2 mA, RL = 1 k 10
µ
s
Fall Time
*2
tf 10
*1 CTR rank
CTR rank CTR (%) Conditions
K 200 to 400 IF = 5 mA, VCE = 5 V
80 to IF = 1 mA, VCE = 5 V
L 100 to 300 IF = 5 mA, VCE = 5 V
25 to IF = 1 mA, VCE = 5 V
M 50 to 150 IF = 5 mA, VCE = 5 V
10 to IF = 1 mA, VCE = 5 V
*2 Test circuit for switching time
PW = 100 s
Duty Cycle = 1/10
µ
Pulse Input
V
CC
V
OUT
R
L
= 1 k
50
I
F
In monitor
Data Sheet PN10242EJ02V0DS
5
PS2703-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
100
50
0
25 50 75 100
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5 mW/˚C
10
0.1
0.5
5
1
0.2 0.6 1.00.0 0.4
0.8
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 25 mA
1.5 mA
1 mA
0.5 mA
10 mA
5 mA
2.5 mA
2 mA
10
4
0
8
6
2
6124 8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
I
F
= 10 mA
4 mA
2 mA
3 mA
1 mA
5 mA
0.5 mA
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
50 000
0.1
500
5 000
10
10 000
1 000
100
50
5
1
0.5
–60 0 40 80–40 –20 20 60 100
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
Remark The graphs indicate nominal characteristics.
Data Sheet PN10242EJ02V0DS
6

PS2703-1-L-A

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
Transistor Output Optocouplers Hi-Iso Photo 1-Ch
Lifecycle:
New from this manufacturer.
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