1/9April 2003
■ HIGH SPEED: t
PD
= 3.7ns (TYP.) at V
CC
=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
=V
NIL
= 28% V
CC
(MIN.)
■ POWER DOWN PROTECTION ON INPUT
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G07 is an advanced high-speed CMOS
SINGLE BUFFER (OPEN DRAIN) fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface5Vto3V.
74V1G07
SINGLE BUFFER (OPEN DRAIN)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G07STR
SOT323-5L 74V1G07CTR
SOT323-5LSOT23-5L