All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-07-03
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifi er applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
fl ange. Manufactured with Wolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P
1dB
= 140 W
- Effi ciency = 50%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Effi ciency = 30.5%
• Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifi cations (combined outputs, tested in Wolfspeed production test fi xture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17 18 — dB
Drain Efficiency
D
23.5 25 — %
Adjacent Channel Power Ratio ACPR — –34 –31 dBc
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
33 38 43 48 53
Efficiency (%)
Peak/Average (dB), Gain (dB)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
Gain
Efficiency
PAR @ 0.01% CCDF
c261402fc _gr1
PTFC261402FC
