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MOCD223R1VM

P1-P3P4-P6P7-P8
4/10/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
Page 1 of 8
© 2003 Fairchild Semiconductor Corporation
MOCD223-M
DESCRIPTION
The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two
monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic
package. It is ideally suited for high density applications that require low input current and eliminates
the need for through-the-board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option “V” for VDE approval, i.e, MOCD223V-M)
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• High Current Transfer Ratio of 500% Minimum at I
F
= 1 mA
• Minimum BV
CEO
of 30 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation Voltage of 2500 V
AC(rms)
Guaranteed
APPLICATIONS
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
EMITTER 1
COLLECTOR 1
LED 1 ANODE
LED 1 CATHODE
1
2
3
4 5
6
7
8
EMITTER 2
COLLECTOR 2
LED 2 ANODE
LED 2 CATHODE
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
60 mA
Forward Current - Peak (PW = 100 µs, 120 pps) I
F
(pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ T
A
= 25°C
P
D
90 mW
Derate above 25°C 0.8 mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
30 V
Collector-Base Voltage V
CBO
70 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, t = 1 min. Duration)
V
ISO
2500 Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C
P
D
250 mW
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
A
-40 to +100 °C
Storage Temperature Range T
stg
-40 to +150 °C
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
T
L
260 °C
4/10/03
Page 2 of 8
© 2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
** Typical values at T
A
= 25°C
NOTE:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage (I
F
= 1.0 mA) V
F
— 1.25 1.3 V
Reverse Leakage Current (V
R
= 6.0 V) I
R
— 0.001 100 µA
Capacitance C
IN
—18— pF
DETECTOR
Collector-Emitter Dark Current
(V
CE
= 5.0 V, T
A
= 25°C) I
CEO1
— 1.0 50 nA
(V
CE
= 5.0 V, T
A
= 100°C) I
CEO2
— 1.0 — µA
Collector-Emitter Breakdown Voltage (I
C
= 100 µA) BV
CEO
30 90 — V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA) BV
ECO
7.0 10 — V
Collector-Emitter Capacitance (f =z 1.0 MHz, V
CE
= 0) C
CE
— 5.5 — pF
COUPLED
Collector-Output Current
(4)
(I
F
= 1.0 mA, V
CE
= 5 V) CTR 500 1000 — %
Collector-Emitter Saturation Voltage (I
C
= 500 µA, I
F
= 1.0 mA) V
CE (sat)
——1.0 V
Tu r n-On Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
)(fig 6.)
t
on
— 3.5 — µs
Tu r n-Off Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
)(fig 6.)
t
off
—95— µs
Rise Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
)(fig 6.)
t
r
— 1.0 — µs
Fall Time
(I
F
= 5.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
)(fig 6.)
t
f
— 2.0 — µs
Isolation Surge Voltage
(1,2,3)
f = 60 Hz, t = 1 min. V
ISO
2500 — — Vac(rms)
Isolation Resistance
(2)
V
I-O
= 500 V R
ISO
10
11
——
Ω
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz C
ISO
— 0.2 — pF
4/10/03
Page 3 of 8
© 2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD223-M
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
Fig. 3 Output Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
I
C
- OUTPUT COLLECTOR CURRENT (N OR MALIZED)
Fig. 4 Output Current vs. Collector - Emitter Voltage
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
Fig. 5 Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
I
F
- LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 55°C
T
A
= 25°C
T
A
= 100°C
0.1 1 10 100
0.1
1
10
V
CE
= 5V
NORMALIZED TO I
F
= 1mA
-80 -60 -40 -20 0 20406080100120
0.01
0.1
1
10
I
F
= 1mA, V
CE
= 5V
NORMALIZED TO T
A
= 25
o
C
012345678910
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
F
= 1mA
NORMALIZED TO V
CE
= 5V
I
020406080100
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
CE
= 10V
NORMALIZED TO T
A
= 25
o
C
P1-P3P4-P6P7-P8

MOCD223R1VM

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Buy MOCD223R1VM
Manufacturer:
ON Semiconductor
Description:
OPTOISOLTR 2.5KV 2CH DARL 8SOIC
Lifecycle:
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