UPA811T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SILICON TRANSISTOR
• SMALL PACKAGE STYLE:
2 NE680 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.9 dB TYP at 2 GHz
• HIGH GAIN:
|S
21E|
2
= 7.5 dB TYP at 2 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
The UPA811T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
V
CBO Collector to Base Voltage V 20
V
CEO Collector to Emitter Voltage V 10
V
EBO Emitter to Base Voltage V 1.5
I
C Collector Current mA 35
P
T Total Power Dissipation
1 Die mW 110
2 Die mW 200
T
J Junction Temperature °C 150
T
STG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
T118APUREBMUN TRAP
60SENILTUO EGAKCAP
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
I
CBO Collector Cutoff Current at VCB = 10 V, IE = 0 μ 0.1A
I
EBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μ 0.1A
h
FE
1
Forward Current Gain at VCE = 3 V, IC 00202108Am 5 =
f
T Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz 5.5 8.0
Cre
2
Feedback Capacitance at VCB = 3 V, IE 7.03.0FpzHM 1 = f ,0 =
|S
21E|
2
Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5
NF Noise Figure at V
CE = 3 V, IC 2.39.1BdzHG 2 = f ,Am 5 =
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1.Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA811T-T1, 3K per reel.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
