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MBRF16H45HE3/45

P1-P3P4-P5
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Document Number: 88784
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
16 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.56 V, 0.62 V
I
R
100 µA
T
J
max.
175 °C
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR16Hxx
ITO-220AC
MBRF16Hxx
MBRB16Hxx
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60 UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Max. average forward rectified current (Fig. 1) I
F(AV)
16 A
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH E
AS
80 mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 kHz I
RRM
1.0 0.5 A
Peak non-repetitive reverse energy (8/20 µs waveform) E
RSM
20 mJ
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88784
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Operating junction temperature range T
J
- 65 to + 175 °C
Storage temperature range T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
V
AC
1500 V
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60 UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
MBR16H35
MBR16H45
MBR16H50
MBR16H60
UNIT
TYP. MAX. TYP. MAX.
Maximum instantaneous forward voltage
(1)
I
F
= 16 A
I
F
= 16 A
T
J
= 25 °C
T
J
= 125 °C
V
F
-
0.52
0.66
0.56
-
0.58
0.73
0.62
V
Maximum reverse current at rated V
R
(2)
T
J
= 25 °C
T
J
= 125 °C
I
R
-
6.0
100
20
-
4.0
100
20
µA
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Thermal resistance, junction to case R
θJC
1.5 3.0 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR16H45-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF16H45-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB16H45-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB16H45-E3/81 1.33 81 800/reel Tape and reel
TO-220AC MBR16H45HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC MBRF16H45HE3/45
(1)
1.94 45 50/tube Tube
TO-263AB MBRB16H45HE3/45
(1)
1.33 45 50/tube Tube
TO-263AB MBRB16H45HE3/81
(1)
1.33 81 800/reel Tape and reel
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Document Number: 88784
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
5
10
15
20
250 50 75 100 125 150 175
MBRF
MBR, MBRB
Average Forward Cu
rrent (A)
Case Temperature (°C)
1 10 100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.0001
0.001
0.1
0.01
1
10
100
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
020406080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1 1
100
10
1000
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRF16H45HE3/45

Mfr. #:
Buy MBRF16H45HE3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 45 Volt 16A Single 150 Amp IFSM
Lifecycle:
New from this manufacturer.
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