SD1274-01

1/7May 2004
SD1274-01
RF POWER BIPOLAR TRANSISTORS
VHF MOBILE APPLICATIONS
REV. 2
FEATURES SUMMARY
160 MHz
13.6 VOLTS
COMMON EMITTER
P
OUT
= 30 W MIN. WITH 10 dB GAIN
DESCRIPTION
The SD1274-01 is a 13.6 V Class C epitaxial sili-
con NPN planar transistor designed primarily for
VHF communications. The SD1274-01 utilizes an
emitter ballasted die geometry to withstand severe
load mismatch conditions.
Figure 1. Package
Figure 2. Pin Connection
Table 1. Order Codes
.380 4L FL (M113)
epoxy sealed
1. Collector 3. Base
2. Emitter 4. Emitter
Order Codes Marking Package Packaging
SD1274-01 SD1274-01 M113 PLASTIC TRAYS
SD1274-01
2/7
Table 2. Absolute Maximum Ratings (T
case
= 25°C)
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (T
CASE
= 25°C)
Table 4. Static
Table 5. Dynamic
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 36 V
V
CEO
Collector-Emitter Voltage 16 V
V
CES
Collector-Emitter Voltage 36 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 8.0 A
P
DISS
Power Dissipation 70 W
T
J
Junction Temperature +200 °C
T
STG
Storage Temperature – 65 to +150 °C
Symbol Parameter Value Unit
R
TH(j-c)
Junction-Case Thermal Resistance 1.2 °C/W
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BV
CES
I
C
= 15 mA; V
BE
= 0 mA 36 V
BV
CEO
I
C
= 50 mA; I
B
= 0 mA 16 V
BV
EBO
I
E
= 5 mA; I
C
= 0 mA 4.0 V
I
CBO
V
CB
= 15 V; I
E
= 0 mA 5 mA
h
FE
V
CE
= 5 V; I
C
= 250 mA 20
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
P
OUT
f = 160 MHz; P
IN
= 3.0 W; V
CE
= 13.6 V 30 W
G
P
f = 160 MHz; P
IN
= 3.0 W; V
CE
= 13.6 V 10 dB
C
OB
f = 1 MHz; V
CB
= 15 V 95 pF
3/7
SD1274-01
TYPICAL PERFORMANCE
Figure 3. Power Output vs Supply Voltage
(136 MHz)
Figure 4. Power Output vs Supply Voltage
(150 MHz)
Figure 5. Power Output vs Supply Voltage
(175 MHz)
Figure 6. Power Gain vs Frequency
Output Power vs. Supply Voltage
F = 136 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 1.0 W
Pin = 1.5 W
Pin = 2.0 W
Output Power vs. Supply Voltage
F = 150 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 1.0 W
Pin = 1.5 W
Pin = 2.0 W
Output Power vs. Supply Voltage
F = 175 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 1.5 W
Pin = 2.0 W
Pin = 3.0 W
Power Gain vs. Frequency
12
10
8
6
4
2
130 140 150 160 170 180 200
Power Gain (dB)
Frequency (MHz)
Pout = 30W
Vcc = 13.6V

SD1274-01

Mfr. #:
Manufacturer:
Advanced Semiconductor, Inc.
Description:
RF Bipolar Transistors RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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