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PESD5V0U1BAF

P1-P3P4-P6P7-P9P10-P12P13-P13
PESD5V0U1BA_BB_BL_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 25 April 2007 3 of 12
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to pin 2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
-10kV
MIL-STD-883 (human
body model)
-8kV
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0U1BA_BB_BL_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 25 April 2007 4 of 12
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage - - 5 V
I
RM
reverse leakage current V
RWM
= 5 V - 5 100 nA
V
BR
breakdown voltage I
R
= 5 mA 5.5 7 9.5 V
C
d
diode capacitance f=1MHz
V
R
= 0 V - 2.9 3.5 pF
V
R
= 5 V - 1.9 - pF
r
dif
differential resistance I
R
= 1 mA - - 100 Ω
f = 1 MHz; T
amb
=25°C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a bidirectional ESD
protection diode
V
R
(V)
054231
006aab036
2.2
2.6
3.0
C
d
(pF)
1.8
006aaa676
−V
CL
−V
BR
−V
RWM
V
CL
V
BR
V
RWM
−I
RM
I
RM
−I
R
I
R
−I
PP
I
PP
−
+
PESD5V0U1BA_BB_BL_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 25 April 2007 5 of 12
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
Fig 4. ESD clamping test setup and waveforms
006aab037
50 Ω
R
Z
C
Z
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
P1-P3P4-P6P7-P9P10-P12P13-P13

PESD5V0U1BAF

Mfr. #:
Buy PESD5V0U1BAF
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors PESD5V0U1BA/SOD2/REEL 13" Q1/T
Lifecycle:
New from this manufacturer.
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