NSR02100HT1G

© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 1
1 Publication Order Number:
NSR02100HT1/D
NSR02100HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Fast Switching Speed
Low Leakage Current
Low Forward Voltage − 0.45 V @ I
F
= 1 mAdc
Surface Mount Device
Low Capacitance Diode
NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic Symbol Value Unit
Total Device Dissipation FR−5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Forward Current (DC) I
F
200 mA
Non−Repetitive Peak Forward Current,
t
p
< 10 msec
I
FSM
2 A
Thermal Resistance
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage Temperature Range
T
J
, T
stg
−55
to150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad
100 VOLT SCHOTTKY
BARRIER DIODE
Device Package Shipping
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
www.onsemi.com
NSR02100HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
JCM G
G
2
1
JC = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NSVR02100HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
NSR02100HT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 μA)
V
R
100
V
Reverse Leakage
(V
R
= 50 V)
I
R
0.05
μAdc
Reverse Leakage
(V
R
= 100 V)
I
R
0.15
mAdc
Forward Voltage
(I
F
= 1 mAdc)
V
F
0.45
Vdc
Forward Voltage
(I
F
= 10 mAdc)
V
F
0.57
Vdc
Forward Voltage
(I
F
= 100 mAdc)
V
F
0.80
Vdc
Forward Voltage
(I
F
= 200 mAdc)
V
F
0.95
Vdc
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
4 10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSR02100HT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Total Capacitance
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
−55°C
150°C
125°C
I
R
, REVERSE CURRENT (μA) I
F
, FORWARD CURRENT (A)C
T
, TOATAL CAPACITANCE (pF)
75°C
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
A
= −55°C
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
0 10 20 30 40 50 60 10070 9080
5.0
0 10 20 30 40 50 60 10070 9080
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5

NSR02100HT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS SOD323 SHKY DIO 100V T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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