CD214A-F150~F1600 Fast Response Rectifiers
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
RoHS compliant*
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
General Information
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass
Passivated Rectifier Diodes offer a forward current of 1.0 A with a choice of repetitive peak reverse voltage of 50 V up to 600 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol
CD214A-
Unit
F150 F1100 F1150 F1200 F1400 F1600
Maximum Repetitive
Peak Reverse Voltage
V
RRM
50 100 150 200 400 600 V
Maximum RMS Voltage V
RMS
35 70 105 140 280 420 V
Maximum DC Blocking Voltage V
DC
50 100 150 200 400 600 V
Maximum Average Forward
Rectified Current
1
I
(AV)
1.0 A
DC Reverse Current @ Rated DC
Blocking Voltage (@T
A
= 25 °C)
I
R
5.0 µA
DC Reverse Current @ Rated DC
Blocking Voltage (@T
A
= 125 °C)
I
R
50.0 µA
Typical Junction Capacitance
2
C
J
10 pF
Maximum Instantaneous
Forward Voltage @ 1 A
V
F
0.95 1.25 1.7 V
Typical Thermal Resistance
3
R
θJA
34 °C/W
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load (JEDEC Method)
I
FSM
30 25 A
Maximum Reverse Recovery Time
4
T
rr
25 35 ns
Typical Reverse Recovery Time
4
T
rr
20 30 ns
Notes:
1 See Forward Derating Curve.
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas.
4 Reverse recovery test condition: IF 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Parameter Symbol CD214A-F150~F1600 Unit
Operating Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
