IPP70N10SL16AKSA1

2006-02-14
Page 7
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
13 Typ. avalanche energy
E
AS
= f (
T
j
)
par.: I
D
= 70 A ,
V
DD
= 25 V,
R
GS
= 25
25 45 65 85 105 125 145
°C
185
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
mJ
700
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 70 A pulsed
0 40 80 120 160 200
nC
280
Q
Gate
0
2
4
6
8
10
12
V
16
SPP70N10L
V
GS
0,8
V
DS max
DS max
V0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
-60 -20 20 60 100 140
°C
200
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
SPP70N10L
V
(BR)DSS
2006-02-14
Page 8
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
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IPP70N10SL16AKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 70A TO220-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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