EQ733L

Absolute Maximum Ratings(Ta=25℃
(*)Vcc=5V
parameter specification
unit
symbol
V
cc
Iout
Topr
Tstg
0.3 6
±1.2
(*)
40 100
40 125
V
mA
Supply voltage
output current
operating ambient
temperature
Storage ambient
temperature
●Functional Block Diagram ●Application Circuit
1:VCC
3:OUT
2:GND
Hall Element
Amplifier
Hybrid Linear Hall Effect Ics EQ-series
EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.
Vout
Vcc
VsatH
VoutO
VsatL
Magnetic flux density
N0S
S
N
Marking
1:VCC
2:GND
3:OUT
123
OUTVCC
0.1μF5V
Please add LPF if required.
GND
(Top View)
(Top View)
Shipped in bulk(500pcs/Pack)
EQ-733L
●Operational Characteristics ●Pin and functions
●Features
¡Analog output which proportional to the magnetic field strength and pole.
¡Magnetic sensitivity 20mV/mT(typ.)
¡Supply voltage from 3.0V to 5.5V at single power supply
¡Operating temperature range -40∼100
¡Ratio-metric analog output
¡3pin surface mount plastic package
¡Quick response 1 μs
 (when the rise-up time of magnetic field is rather than 1μs)
¡Low output noise voltage 2mVp-p
Pin No.
1
2
3
Pin name
VCC
GND
OUT
Function
Power supply
Ground
Output
Recommend operating conditions
VCC
IOUT
CL
3.0
−1.0
5.0 5.5
1.0
1000
V
mA
pF
Supply voltage
output current
output load
parameter min
typ max unit
symbol
EQ-733L
●Electric characteristics(TA=25, VCC=5V
●Magnetic characteristics(TA=25, VCC=5V
※1mT = 10Gauss
※1mT = 10Gauss
Parameter
Conditions min Unit
Symbol
V
CC
−0.3
0
9
260
1
2
0.3
2
12
V
CC
0.3
mA
V
V
kHz
μs
μs
μs
mVp-p
Typ Max
Output saturation voltage at Low Level
(*1)
Bandwidth
(*2)
Response time
(*2)
Output rise time
(*2)
Output fall time
(*2)
Output noise voltage
(*2)
B=0mT with no load
I
OUT
1mA
I
OUT
=1mA
3dB C
L
=1000pF
I
CC
V
SATH
V
SATL
f
T
t
RES
t
RISE
t
FALL
t
REAC
V
Np-p
Output saturation voltage at High Level
(*1)
Current consumption
(*1&2) Design target at 25
(*3) See Characteristic Definitions section
(*4) See Characteristic Definitions section
Rise time : 10% of Input MFD to 90% of output voltage.
Fall time: 90% of Input MFD to 10% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
=1000pF
Output delay time
(*2)
Rise time : 10% of Input MFD to 10% of output voltage.
Fall time: 90% of Input MFD to 90% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
=1000pF
10% to 90% of output voltage under
input/output MFD step is 1 to 2μs.
C
L
=1000pF
90% to 10% of output voltage under
input/output MFD step is 1 to 2μs
C
L
=1000pF
●Ratio-metric characteristics(TA=25
※1mT = 10Gauss
(*5) See Characteristic Definitions section
Parameter
Symbol
Conditions min Typ Max Unit
Sensitivity
(*3)
Quiescent voltage
Linearity
(*4)
V
h
V
OUT0
ρ
B=0±41mT with no load
B=0mT
B=0mT (I
OUT
=0mA)
B=±50mT (I
OUT
=±1mA)
17
2.45
−0.5
20
2.5
23
2.55
0.5
mV/mT
V
%F.S.
Parameter
Symbol
Conditions min Typ Max Unit
Error in Ratiometric of
Magnetic sensitivity
(*5)
Error in Ratiometric of
Quiescent voltage
(*5)
V
OUT0-R
V
h-R
B=0±41mT with no load
B=0mT
−3
−3
3
3
%
%
Input magnetic field
Rise time of magnetic field Fall time of magnetic field
tRES
tREA
tREA
tFALL
tRES
tRISE
Output voltage
of sensor
90%
90%
10%
90%
1∼2μs
1∼2μs
10%
90%
10%
10%
●Characteristic Definitions
ρ=            ×100
V
out(+B)ーVout(ーB
V
out(B){Vh×B+Vint
①Magnetic sensitivity Vh (mV/mT)
Magnetic sensitivity is defined as the slope of the straight line
obtained from three points, Quiescent voltage V
OUT0VOUT
(+B)V
OUT (B) (B is described in measurement condition),
by the least square approximation.
②Linearity ρ (%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescent voltage V
OUT0VOUT (B)VOUT (−B) (B and
Output current are described in measurement condition
shown below), by the least square approximation.
〈Condition〉0mT applied、I
OUT = 0mA
+BmT applied : I
OUT=+1.0mA(Draw out from output)
BmT applied : I
OUT1.0mA(Draw in to output)
Where FULLSCALE(F.S.) is defied as V
OUT (+B)、VOUT (−B),
Vint is y-intercepts of the line obtained in the Definition of
Magnetic sensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometric of quiescent voltage
Error in ratiometric is defined as the ratio of the variation of
sensitivity and quiescent voltage at 3V and 5V as following
equations..
④Response time t
RES (μs)
Response time is defined as the time from the 90% reach
point of input magnetic field rise up to the 90% reach point of
output voltage rise up
⑤Output rise time, Output fall time  t
RISEtFALL(μs
 Output rise up time is defined as the time from the 10% point
to the 90% point of output voltage under a pulse like
magnetic field input shown below.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magnetic field input shown below.
⑥Output delay time t
REAC(μs
Output delay time is defined as the time from the 10% point
in rise up(90% point in fall down) of input magnetic field to
the 10% point in rise up(90% point in fall down) of output
voltage under a pulse like magnetic field input shown below..
〈Relations of the input Magnetic field and t
REStRISEtFALL
t
REAC
VhーR=        ×100
V
h(VCC=5V) 5
3
5
3
V
h(VCC=3V)
VOUT0R        ×100
V
OUT0(VCC=5V) 5
3
5
3
V
OUT0(VCC=3V)
EQ-733L
●Supply Voltage
(For reference onlyTemperature dependence of Vout0
●Package (Unit:mm)
●Operational Characteristics
●Temperature dependence of VH
Supply Voltage〔V〕
Ambient Temperature〔℃〕
Offset Voltage〔V〕
Ambient Temperature〔℃〕
Magnetic Sensitivity〔mV/mT〕
Ambient Temperature〔℃〕
Output Voltage〔V〕
Magnetic flux density〔mT〕
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
•This product contains galium arsenide(GaAs).Handling and discarding precsutions required.
1.5
3.0
-40 -20 0 20 40 60 80 100 120
2
2.5
3
3.5
4
4.5
5
5.5
6
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 100 120
B=0mT
Vcc=5V
Vcc=4V
Vcc=3V
0
10
20
30
-40
-20 0 20 40 60 80 100 120
Vcc=5V
Vcc=4V
Vcc=3V
Ta=25℃
Vcc=5V
Vcc=4V
Vcc=3V
-50-100-150 0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50 100 150
10°
10°
45°
4.1
φ0.3
Sensor Center
1.15
0.25
1.27
0.55
3
0.4
0.79
3.0Max. 15.0
1.27
123
3OUT
2GND
1VCC
0.41
Note1)The sensor center is located within the φ0.3mm circle.
Note2)The metal portions on the package side (support lead) are connected to the internal circuits. The support lead should
be isolate from the external circuit and the other support lead.

EQ733L

Mfr. #:
Manufacturer:
Description:
SENSOR HALL EFFECT ANALOG 3SIP
Lifecycle:
New from this manufacturer.
Delivery:
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