32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
12 ©2004 Micron Technology, Inc. All rights reserved.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Voltage on V
DD Supply
Relative to Vss . . . . . . . . . . . . . . . . . . . .-1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to Vss . . . . . . . . . . . . . . . . . . . .-1V to +4.6V
Operating Temperature
T
OPR
(Commercial - ambient) . . . . . 0°C to + 65°C
T
OPR
(Industrial - ambient). . . . . . --40°C to +85°C
Storage Temperature (plastic) . . . . . .-55°C to +150°C
Table 9: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
SUPPLY VOLTAGE
V
DD, VDDQ3 3.6 V
INPUT HIGH VOLTAGE: Logic 1; All inputs
V
IH 2VDD +
0.3
V22
INPUT LOW VOLTAGE: Logic 0; All inputs
V
IL -0.3 0.8 V 22
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
Command and
Address Inputs
II
-20 20 µA
33
CK, S#
-20 20 µA
DQMB
-5 5 µA
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUT ≤ VDDQ
DQ
I
OZ
-5 5 µA
33
OUTPUT LEVELS:
Output High Voltage (I
OUT = -4mA)
Output Low Voltage (I
OUT = 4mA)
V
OH 2.4 – V
VOL –0.4 V
Table 10: IDD Specifications and Conditions – 32MB
Notes: 1, 5, 6, 11, 13; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
I
DD1 500 460 380 mA 3, 18, 19, 29
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
I
DD2 888mA 29
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All device banks active after
t
RCD met; No accesses in
progress
I
DD3 180 180 140 mA 3, 12, 19, 29
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
I
DD4 600 560 480 mA 3, 18, 19, 29
AUTO REFRESH CURRENT
t
RFC =
t
RFC (MIN)
I
DD5 920 840 760 mA 3, 12, 18,
19, 29,30
CKE = HIGH; S# = HIGH
t
RFC = 15.625µs
I
DD6 12 12 12 mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
(Low power not available with industrial
temperature option)
Standard I
DD7 444mA 3
Low Power (L) I
DD7 222mA